AUIRLR024N International Rectifier, AUIRLR024N Datasheet - Page 4

MOSFET N-CH 55V 17A DPAK

AUIRLR024N

Manufacturer Part Number
AUIRLR024N
Description
MOSFET N-CH 55V 17A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRLR024N

Input Capacitance (ciss) @ Vds
480pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
65 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Power - Max
45W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
17A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.065ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
45W
Operating
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLR024N
Manufacturer:
IR
Quantity:
12 500
4
Fig 3. Typical Transfer Characteristics
100
0.1
100
10
0.1
10
1
Fig 1. Typical Output Characteristics
1
2
0.1
TOP
BOTTOM 2.5V
3
V
V
GS
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
1
5
2.5V
T = 175°C
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 15V
10
8
9
100
10
A
A
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
0.1
I
TOP
BOTTOM 2.5V
D
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
= 18A
T , Junction Temperature (°C)
V
J
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
0
, Drain-to-Source Voltage (V)
Vs. Temperature
20
1
40
2.5V
60
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
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100
A
A

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