AUIRFR5505TR International Rectifier, AUIRFR5505TR Datasheet - Page 2

• Manufacturer Part Number: AUIRFR5505TR
• Description: MOSFET P-CH 55V 18A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFR5505TR

• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
** When mounted on 1" square PCB (FR-4 or G-10 Material).
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
R
I
T
For recommended footprint and soldering techniques refer to application note #AN-994.
DS(on)
iss
oss
rss
g
gs
gd
rr
2
SD
J
(BR)DSS
G
≤ 150 C
= 25Ω, I
≤ -6.6A, di/dt ≤ -240A/ s, V
/∆T
J
J
= 25°C, L = 2.8mH
AS
= -6.6A (See Figure 12)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
DD
Parameter
™
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.0
4.2
-55
„
… This is applied for I-PAK, L
† Uses IRF9Z24N data and test conditions.
Pulse width ≤ 300 s; duty cycle ≤ 2%.
lead and center of die contact.
-0.049
Typ.
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
650
270
120
–––
–––
–––
110
4.5
7.5
12
28
20
16
51
Max. Units
Max. Units
0.11
-100
-250
-1.6
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
-4.0
-18
-64
7.1
-25
32
15
77
V/°C
µA
nA
nC
nH
pF
nC
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz,see Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
S
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -9.6A
= -9.6A
= 25°C, I
= 25°C, I
of D-PAK is measured between
= 2.8Ω, See Fig.10
= 2.6 Ω
= V
= -25V, I
= -55V, V
= -44V, V
= -44V
= -28V
= -25V
= 0V, I
= -10V, I
= -20V
= 20V
= -10V,See Fig 6 and 13
= 0V
GS
, I
D
D
S
F
= -250µA
D
D
= -250µA
GS
GS
= -9.6A, V
= -9.6A
= -9.6A
= -9.6A
f
Conditions
Conditions
= 0V
= 0V, T
D
= -1mA
h
f
GS
J
f
= 150°C
www.irf.com
= 0V
G
f
G
f
S
D
D
S