AUIRFU4104 International Rectifier, AUIRFU4104 Datasheet - Page 9
![MOSFET N-CH 40V 42A IPAK](/photos/19/8/190893/ge3ipak05-40_sml.jpg)
AUIRFU4104
Manufacturer Part Number
AUIRFU4104
Description
MOSFET N-CH 40V 42A IPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFR4104TRL.pdf
(14 pages)
Specifications of AUIRFU4104
Input Capacitance (ciss) @ Vds
2950pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
89nC @ 10V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
4.3mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
I-PAK
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
5.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
119 A
Power Dissipation
140 W
Mounting Style
SMD/SMT
Gate Charge Qg
59 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFU4104
Manufacturer:
IR
Quantity:
12 500
www.irf.com
+
-
D.U.T
Fig 17.
+
-
SD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
V
90%
10%
V
DS
GS
-
G
HEXFET
t
d(on)
+
t
r
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
t
d(off)
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
P.W.
f
SD
DS
Waveform
Waveform
for N-Channel
Ripple
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
9