IRFH5215TR2PBF International Rectifier, IRFH5215TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFH5215TR2PBF
• Description: MOSFET N-CH 150V 5.0A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5215TR2PBF

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-VQFN Exposed Pad
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 104 W
• Gate Charge Qg: 20 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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6
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‚
+
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Fig 17. Gate Charge Test Circuit
1K
ƒ
+
-
•
•
•
•
Fig 16.
SD
S
•
•
•
DUT
-
L
„
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
=10V
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Vgs
Id