AUIRFZ44ZS International Rectifier, AUIRFZ44ZS Datasheet - Page 2

• Manufacturer Part Number: AUIRFZ44ZS
• Description: MOSFET N-CH 55V 51A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRFZ44ZS

• Input Capacitance (ciss) @ Vds: 1420pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.9 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 51 A
• Power Dissipation: 80 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Diode Characteristics
Notes:

‚
ƒ
„
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
V
2
Repetitive rating; pulse width limited by
R
I
Pulse width
max. junction temperature. (See fig. 11).
recommended for use above this value.
T
Limited by T
SD
DSS
eff.
J
G
= 25 , I
/ T
175°C.
31A, di/dt
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.0ms; duty cycle
= 31A, V
, starting T
840A/µs, V
Parameter
GS
=10V. Part not
Parameter
J
Parameter
™
DD
= 25°C, L =0.18mH,
V
2%.
(BR)DSS
,
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min.
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
55
22
…
†
‡
ˆ
‰
0.054
Typ.
1420
Typ.
Typ.
11.1
–––
–––
–––
–––
–––
–––
–––
240
130
830
190
300
–––
–––
–––
7.2
4.5
7.5
29
12
14
68
33
41
23
17
C
as C
Limited by T
avalanche performance.
This value determined from sample failure population, starting
T
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R is rated at T
J
oss
= 25°C, L =0.18mH, R
oss
eff. is a fixed capacitance that gives the same charging time
while V
Max.
Max.
Max.
13.9
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
4.0
1.2
20
43
11
18
51
35
26
Jmax
J
DS
of approximately 90°C.
, see Fig.12a, 12b, 15, 16 for typical repetitive
is rising from 0 to 80% V
Units
Units
Units
V/°C
2
m
µA
nA
nC
nH
nC
Pak, when mounted on 1" square PCB
pF
ns
ns
V
V
S
A
V
G
= 25 , I
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 31A
= 31A
= 25°C, I
= 25°C, I
= 15
= V
= 25V, I
= 55V, V
= 55V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
AS
, I
= 31A, V
D
f
f
Conditions
D
DS
Conditions
S
F
D
D
DS
DS
= 250µA
Conditions
GS
GS
= 250µA
= 31A, V
= 31A, V
= 31A
= 31A
= 0V to 44V
DSS
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
f
.
GS
www.irf.com
f
D
= 1mA
DD
=10V.
GS
J
= 125°C
= 28V
G
= 0V
G
f
S
D
D
S