AUIRF540ZS International Rectifier, AUIRF540ZS Datasheet

AUIRF540ZS

Manufacturer Part Number

AUIRF540ZS

Description

MOSFET N-CH 100V 36A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.AUIRF540Z.pdf (14 pages)

Specifications of AUIRF540ZS

Input Capacitance (ciss) @ Vds

1770pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

26.5 mOhm @ 22A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

36A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

63nC @ 10V

Power - Max

92W

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 leads + Tab), TO-263AB

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

26.5 mOhms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

36 A

Power Dissipation

92 W

Mounting Style

SMD/SMT

Gate Charge Qg

42 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRF540ZS

Manufacturer:

Quantity:

12 500

Current page: 1 of 14
Download datasheet (327Kb)

Absolute Maximum Ratings

specifications is not implied.

Features

Description

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest processing

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

functional operation of the device at these or any other condition beyond those indicated in the

Parameter

AUTOMOTIVE GRADE

@ 10V

Gate

AUIRF540Z

TO-220AB

HEXFET

See Fig.12a, 12b, 15, 16

300(1.6mm from case)

Typ.

0.50

–––

10 lbf

(BR)DSS

DS(on)

Drain

-55 to + 175

AUIRF540ZS

Max.

in (1.1N

0.61

140

± 20

120

AUIRF540ZS

Power MOSFET

AUIRF540Z

max. 26.5m

typ.

Pak

Max.

1.64

–––

PD - 96326

Source

21m

100V

36A

Units

W/°C

°C/W

°C

Related parts for AUIRF540ZS

AUIRF540ZS Summary of contents

Page 1

... Parameter 96326 AUIRF540Z AUIRF540ZS ® HEXFET Power MOSFET V 100V D (BR)DSS R typ. 21m DS(on) max. 26.5m I 36A Pak AUIRF540ZS D S Drain Source Max. Units 36 25 140 92 0.61 W/°C ± 120 See Fig.12a, 12b 175 °C 300(1.6mm from case lbf in (1.1N m) Typ. ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Automotive (per AEC-Q101) Comments: This Automotive qualification. Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 2500 C oss = 2000 Ciss 1500 1000 500 ...

Page 6

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse 90 BOTTOM 10% Duty Cycle 20A ...

Page 9

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

10 www.irf.com ...

Page 11

2 2 www.irf.com 11 ...

Page 12

D Pak Tape & Reel Infomation TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

Page 13

... Base part Package Type AUIRF540Z TO-220 AUIRF540ZS D2Pak www.irf.com Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRF540Z AUIRF540ZS AUIRF540ZSTRL AUIRF540ZSTRR 13 ...

Page 14

... Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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