AUIRF1010ZL International Rectifier, AUIRF1010ZL Datasheet - Page 5

• Manufacturer Part Number: AUIRF1010ZL
• Description: MOSFET N-CH 55V 94A TO262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1010ZL

• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 5.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-262
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 7.5 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 94 A
• Power Dissipation: 140 W
• Mounting Style: Through Hole
• Gate Charge Qg: 63 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000.0
100.0
10.0
5000
4000
3000
2000
1000
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
0.6
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 25°C
Coss
Crss
Ciss
1.0
10
f = 1 MHZ
1.4
V GS = 0V
1.8
100
10000
1000
100
0.1
10
20
16
12
8
4
0
1
Fig 8. Maximum Safe Operating Area
1
0
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I D = 75A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
VDS= 28V
40
60
100µsec
10msec
1msec
100
80
1000
5
100