AUIRF4104S International Rectifier, AUIRF4104S Datasheet - Page 7
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AUIRF4104S
Manufacturer Part Number
AUIRF4104S
Description
MOSFET N-CH 40V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of AUIRF4104S
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
4.3mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
D2-PAK
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
5.5 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
140 W
Mounting Style
SMD/SMT
Gate Charge Qg
68 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
1000
100
0.1
10
140
120
100
1
1.0E-06
80
60
40
20
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
50
Vs. Temperature
0.05
0.01
0.10
TOP
BOTTOM 1% Duty Cycle
I D = 75A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
1.0E-05
Single Pulse
125
150
175
tav (sec)
1.0E-04
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
t
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
Figures 12a, 12b.
avalanche pulse.
voltage increase during avalanche).
T
D = Duty cycle in avalanche = t
Z
av =
av
thJC
jmax
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
E
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E-03
= P
D (ave)
jmax
pulsewidth,
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
]
thJC
tav
jmax
1.0E-02
7
is