AUIRF3710ZS International Rectifier, AUIRF3710ZS Datasheet - Page 5

• Manufacturer Part Number: AUIRF3710ZS
• Description: MOSFET N-CH 100V 59A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF3710ZS

• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 18 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 59 A
• Power Dissipation: 160 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 82 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100000
1000.00
10000
100.00
1000
10.00
100
10
1.00
0.10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
0.4
T J = 175°C
V SD , Source-to-Drain Voltage (V)
Forward Voltage
0.6
V
C
C rss
C oss = C ds + C gd
GS = 0V,
iss
= C gd
= C
0.8
T J = 25°C
gs
Ciss
Coss
10
+ C
f = 1 MHZ
1.0
gd
Crss
, C
ds
1.2
V GS = 0V
SHORTED
1.4
100
1.6
12.0
10.0
1000
8.0
6.0
4.0
2.0
0.0
100
0.1
Fig 8. Maximum Safe Operating Area
10
1
0
Fig 6. Typical Gate Charge vs.
1
I D = 35A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
V DS = 80V
V DS = 50V
V DS = 20V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
40
60
100
100μsec
1msec
10msec
80
5
1000
100