AUIRL3705ZL International Rectifier, AUIRL3705ZL Datasheet - Page 9

MOSFET N-CH 55V 75A TO262

AUIRL3705ZL

Manufacturer Part Number
AUIRL3705ZL
Description
MOSFET N-CH 55V 75A TO262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRL3705ZL

Input Capacitance (ciss) @ Vds
2880pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 52A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 5V
Power - Max
130W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
86A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
0.0065ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
130W
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
8 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
86 A
Power Dissipation
130 W
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com

+
-
D.U.T
ƒ
+
-
SD
Fig 17.
G
V
90%
10%
V
-
DS
GS
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
+
t
d(on)
Power MOSFETs
t
r
+
-
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
t
d(off)
P.W.
SD
DS
for N-Channel HEXFET
t
Waveform
f
Waveform
Ripple
Body Diode
+
-
Period
Body Diode Forward
Diode Recovery
5%
Current
dv/dt
Forward Drop
di/dt
®
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
9

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