AUIRF1404ZSTRR International Rectifier, AUIRF1404ZSTRR Datasheet - Page 2

• Manufacturer Part Number: AUIRF1404ZSTRR
• Description: MOSFET N-CH 40V 160A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1404ZSTRR

• Input Capacitance (ciss) @ Vds: 4340pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
†
Static Electrical Characteristics @ T
V
∆V
R
V
gfs
I
I
Dynamic Electrical @ T
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
R
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
same charging time as C
from 0 to 80% V
Limited by T
typical repetitive avalanche performance.
25Ω, I
eff.
G
oss
= 25Ω, I
eff. is a fixed capacitance that gives the
/∆T
AS
= 75A, V
J
AS
starting T
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Jmax
Jmax
= 75A, V
DSS
, starting T
, see Fig.12a, 12b, 15, 16 for
GS
Parameter
=10V.
.
J
= 25°C, L = 0.11mH, R
GS
oss
Parameter
Parameter
=10V. Part not
J
J
™
while V
= 25°C, L = 0.11mH
= 25°C (unless otherwise specified)
DS
is rising
J
G
= 25°C (unless otherwise specified)
=
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
‡
ˆ
‰
Š
Œ
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
This is only applied to TO-220AB pakcage.
This is applied to D
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
TO-220 device will have an Rth value of 0.65°C/W.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A. Note
that current limitations arising from heating of the device leads
may occur with some lead mounting arrangements.
θ
0.033
4340
1030
3300
1350
–––
–––
–––
–––
–––
–––
–––
100
110
550
920
–––
–––
–––
2.7
4.5
7.5
31
42
18
36
58
28
34
http://www.irf.com/technical-info/appnotes/an-1140.pdf
-200
–––
–––
–––
250
200
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
750
3.7
4.0
1.3
20
42
51
V/°C
2
mΩ
µA
nA
nC
nH
nC
Pak, when mounted on 1" square PCB (FR-
ns
pF
ns
V
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C, I
= 3.0 Ω
= V
= 25V, I
= 40V, V
= 40V, V
= 32V
= 20V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
e
e
Conditions
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
e
www.irf.com
e
D
= 1mA
DD
GS
J
= 125°C
= 20V
= 0V
f
e