AUIRF2907Z International Rectifier, AUIRF2907Z Datasheet

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AUIRF2907Z

Manufacturer Part Number
AUIRF2907Z
Description
MOSFET N-CH 75V 75A TO220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRF2907Z

Input Capacitance (ciss) @ Vds
7500pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF2907Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF2907ZL
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF2907ZS
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF2907ZS-7P
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IR
Quantity:
12 500
Part Number:
AUIRF2907ZS7PTL
Manufacturer:
IR
Quantity:
12 500
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
Features
HEXFET
*Qualification standards can be found at http://www.irf.com/
Description
Specifically designed for Automotive applications, this
HEXFET
ing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
D
D
D
DM
AR
J
STG
www.irf.com
D
GS
AS
AS
AR
JC
CS
JA
@ T
@ T
@ T
@T
(tested)
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
®
is a registered trademark of International Rectifier.
Power MOSFET utilizes the latest process-
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
) is 25°C, unless otherwise specified.
j
AUTOMOTIVE GRADE
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V
G
(Package Limited)
i
Gate
D
S
G
d
V
R
I
I
HEXFET
AUIRF2907Z
D (Silicon Limited)
D (Package Limited)
(BR)DSS
DS(on)
D
AUIRF2907Z
See Fig.12a,12b,15,16
TO-220AB
10 lbf•in (1.1N•m)
Typ.
0.50
Drain
–––
–––
-55 to + 175
D
max.
®
Max.
G
300
± 20
170
120
680
300
270
690
2.0
75
D
Power MOSFET
S
0.50
Max.
–––
62
k
PD - 97545
4.5m
Source
170A
75V
75A
S
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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AUIRF2907Z Summary of contents

Page 1

... International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com AUIRF2907Z HEXFET V D (BR)DSS R DS(on (Silicon Limited (Package Limited) D TO-220AB AUIRF2907Z G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited See Fig.12a,12b,15,16 h Parameter PD - 97545 ® Power MOSFET 75V max ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 1000 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 T J ...

Page 5

0V, C iss = SHORTED C rss = oss = 10000 C iss C oss C rss 1000 100 1 ...

Page 6

Limited By Package 140 120 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 8

Duty Cycle = Single Pulse 0.01 0.05 10 0.10 1 0.1 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current Vs.Pulsewidth 300 TOP Single Pulse BOTTOM 1% Duty Cycle 250 75A 200 150 100 ...

Page 9

D.U.T + ƒ ‚ „  Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive Period P.W. D.U.T. I Waveform ...

Page 10

TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com ...

Page 11

... Ordering Information Base part Package Type AUIRF2907Z TO-220 www.irf.com Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF2907Z 11 ...

Page 12

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product ...

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