AUIRF2907ZS7PTL International Rectifier, AUIRF2907ZS7PTL Datasheet - Page 5

• Manufacturer Part Number: AUIRF2907ZS7PTL
• Description: MOSFET N-CH 75V 180A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF2907ZS7PTL

• Input Capacitance (ciss) @ Vds: 7580pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 180A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab), TO-263CB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100000
10000
1000
1000
100
100
0.1
10
1
Fig 5. Typical Capacitance vs.
0.0
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
0.2
V DS , Drain-to-Source Voltage (V)
T J = 175°C
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.4
C rss
C iss
C oss
0.6
f = 1 MHZ
10
0.8
T J = 25°C
1.0
V GS = 0V
1.2
100
1.4
10000
1000
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
1
0.1
0
Fig 8. Maximum Safe Operating Area
I D = 110A
Tc = 25°C
Tj = 175°C
Single Pulse
LIMITED BY PACKAGE
Fig 6. Typical Gate Charge vs.
V DS , Drain-toSource Voltage (V)
Q G Total Gate Charge (nC)
Gate-to-Source Voltage
50
V DS = 60V
V DS = 38V
V DS = 15V
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
1msec
10.0
10msec
100µsec
DC
150
100.0
200
5