AUIRFS4310 International Rectifier, AUIRFS4310 Datasheet - Page 2
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AUIRFS4310
Manufacturer Part Number
AUIRFS4310
Description
MOSFET N-CH 100V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRFS4310TRL.pdf
(13 pages)
Specifications of AUIRFS4310
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
130 A
Power Dissipation
300 W
Mounting Style
SMD/SMT
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRFS4310
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
AUIRFS4310PBF
Manufacturer:
IR
Quantity:
21 400
Company:
Part Number:
AUIRFS4310TRLPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
AUIRFS4310Z
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
AUIRFS4310ZPBF
Manufacturer:
IR
Quantity:
6 000
Part Number:
AUIRFS4310ZTRL
Manufacturer:
IR
Quantity:
20 000
Static Electrical Characteristics @ T
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
V
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
rr
Calculated continuous current based on maximum allowable
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
R
above this value.
I
Pulse width
2
(BR)DSS
junction temperature. Package limitation current is 75A
SD
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
= 25 , I
75A, di/dt
/ T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate Input Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
400µs; duty cycle
= 75A, V
, starting T
550A/µs, V
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.35mH
DD
di
V
2%.
Parameter
Parameter
(BR)DSS
, T
J
J
= 25°C (unless otherwise specified)
175°C.
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
––– 0.064 –––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 720.1 –––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
C
as C
C
C
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at T
oss
oss
oss
oss
while V
7670
eff. (TR) is a fixed capacitance that gives the same charging time
eff. (ER) is a fixed capacitance that gives the same energy as
–––
–––
–––
–––
–––
–––
–––
170
110
540
280
650
–––
–––
–––
120
5.6
1.4
3.3
46
62
26
68
78
45
55
82
while V
DS
130
-200
–––
–––
–––
250
200
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
550
120
180
–––
7.0
4.0
1.3
20
68
83
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
J
V/°C
m
approximately 90°C.
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
f = 1MHz, open drain
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.6
= V
= 50V, I
= 100V, V
= 100V, V
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
DSS
D
g
g
D
S
DS
DS
D
D
= 250µA
DSS
= 75A, V
.
= 250µA
= 75A
= 75A
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 75A
g
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
i
h
www.irf.com
d
, See Fig.11
, See Fig. 5
g
G
g
D
S