AUIRF1324S-7P International Rectifier, AUIRF1324S-7P Datasheet - Page 7

• Manufacturer Part Number: AUIRF1324S-7P
• Description: MOSFET N-CH 24V 429A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of AUIRF1324S-7P

• Input Capacitance (ciss) @ Vds: 7700pF @ 19V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 252nC @ 10V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Configuration: Single Quint Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 mOhms
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 429 A
• Power Dissipation: 300 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 180 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
250
200
150
100
50
0
25
Starting T J , Junction Temperature (°C)
50
TOP
BOTTOM 1.0% Duty Cycle
I D = 160A
75
100
Single Pulse
125
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig 16. Threshold Voltage Vs. Temperature
150
-75 -50 -25 0
I D = 250µA
I D = 1.0mA
I D = 1.0A
175
T J , Temperature ( °C )
25 50 75 100 125 150 175 200
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figure 22a, 22b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
thJC
D (ave)
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
= Average power dissipation per single avalanche pulse.
av
) = Transient thermal resistance, see Figures 13)
jmax
. This is validated for every part type.
P
D (ave)
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
av
·f
= P
D (ave)
av
) = DT/ Z
·t
th
av
]
jmax
thJC
jmax
is not exceeded.
(assumed as
7