AUIRF3805L International Rectifier, AUIRF3805L Datasheet - Page 7
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AUIRF3805L
Manufacturer Part Number
AUIRF3805L
Description
MOSFET N-CH 55V 160A TO262
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.AUIRF3805STRL.pdf
(15 pages)
Specifications of AUIRF3805L
Input Capacitance (ciss) @ Vds
7960pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.3 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
290nC @ 10V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-262-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
210 A
Power Dissipation
300 W
Mounting Style
Through Hole
Gate Charge Qg
190 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AUIRF3805L-7P
Manufacturer:
IR
Quantity:
12 500
www.irf.com
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
I
AS
12V
V
V
G
GS
R G
20V
V
Same Type as D.U.T.
V DS
GS
Current Regulator
Q
.2 F
GS
t p
t p
50K
3mA
Current Sampling Resistors
I AS
D.U.T
.3 F
0.01
L
I
G
Q
Charge
Q
V
GD
G
(BR)DSS
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
+
-
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
2000
1600
1200
800
400
4.5
4.0
3.5
3.0
2.5
2.0
1.5
0
Fig 12c. Maximum Avalanche Energy
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
I D = 250µA
TOP
BOTTOM
125
100 125 150 175
150
20A
15A
75A
I D
7
175