BLF7G22LS-160,118 NXP Semiconductors, BLF7G22LS-160,118 Datasheet - Page 3

• Manufacturer Part Number: BLF7G22LS-160,118
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,118

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
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and I’m convinced that you’ll find the 14
edition even more useful in your daily design work.”
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Business Line High Performance RF
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NXP Semiconductors RF Manual 14
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