BLF7G27LS-90P,112 NXP Semiconductors, BLF7G27LS-90P,112 Datasheet
BLF7G27LS-90P,112
Specifications of BLF7G27LS-90P,112
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BLF7G27LS-90P,112 Summary of contents
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... BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 1 — 2 November 2010 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G27L-90P (SOT1121A BLF7G27LS-90P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G27L-90P BLF7G27LS-90P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P ...
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... P L(AV η D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-90P and BLF7G27LS-90P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 1. Package outline SOT1121A BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P scale D ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 2. Package outline SOT1121B BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P scale ...
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... ESD LDMOS LDMOST N-CDMA PAR RF VSWR 10. Revision history Table 9. Revision history Document ID BLF7G27L-90P_BLF7G27LS-90P v.1 BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF7G27L-90P_BLF7G27LS-90P Objective data sheet BLF7G27L-90P; BLF7G27LS-90P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 2 November 2010 Document identifier: BLF7G27L-90P_BLF7G27LS-90P ...