BFS17,235 NXP Semiconductors, BFS17,235 Datasheet - Page 3
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BFS17,235
Manufacturer Part Number
BFS17,235
Description
TRANS NPN 15V 25MA 1GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFS17215.pdf
(8 pages)
Specifications of BFS17,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1GHz
Noise Figure (db Typ @ F)
4.5dB @ 500MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
25 @ 2mA, 1V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
September 1995
R
I
h
f
C
C
C
F
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
NPN 1 GHz wideband transistor
th j-s
c
e
re
s
is the temperature at the soldering point of the collector pin.
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
noise figure
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
f = 500 MHz
E
C
C
C
C
E
C
C
C
= 0; V
= i
= 2 mA; V
= 25 mA; V
= 2 mA; V
= 25 mA; V
= i
= 1 mA; V
= 2 mA; V
e
c
= 0; V
= 0; V
CB
= 10 V
CONDITIONS
3
CB
EB
CE
CE
CE
CE
CE
CE
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 1 V
= 5 V; f = 500 MHz
= 5 V; f = 1 MHz
= 5 V; R
= 1 V
= 5 V; f = 500 MHz
up to T
S
= 50 ;
CONDITIONS
s
= 70 C; note 1
25
25
MIN.
90
90
1
1.6
0.8
0.65
4.5
TYP.
VALUE
260
Product specification
10
1.5
2
MAX.
BFS17
UNIT
K/W
nA
GHz
GHz
pF
pF
pF
dB
UNIT