BFG520/XR,235 NXP Semiconductors, BFG520/XR,235 Datasheet - Page 8
![TRANS RF NPN 9GHZ 15V SOT143](/photos/16/4/160413/sot143_sml.jpg)
BFG520/XR,235
Manufacturer Part Number
BFG520/XR,235
Description
TRANS RF NPN 9GHZ 15V SOT143
Manufacturer
NXP Semiconductors
Datasheet
1.BFG520XR235.pdf
(14 pages)
Specifications of BFG520/XR,235
Package / Case
SC-61AA, SOT143R
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
9GHz
Noise Figure (db Typ @ F)
1.1dB ~ 2.1dB @ 900MHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 20mA, 6V
Current - Collector (ic) (max)
70mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
60
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
70 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 9 GHz wideband transistor
I
f = 900 MHz; Z
I
f = 2 GHz; Z
C
C
= 5 mA; V
= 5 mA; V
o
CE
CE
= 50 .
o
= 6 V;
= 6 V;
= 50 .
pot. unst.
region
180
180
G max = 13 dB
0
0
135
135
135
135
0.2
0.2
0.2
0.2
MS
G = 12 dB
0.2
0.2
G = 11 dB
G = 10 dB
stability
circle
0.5
0.5
0.5
0.5
Fig.15 Noise circle figure.
Fig.16 Noise circle figure.
Rev. 04 - 23 November 2007
F min = 1. 9 dB
0.5
0.5
F = 3 dB
OPT
F = 2 dB
F = 1.5 dB
F = 2 dB
90
90
90
90
F = 2.5 dB
1
1
1
1
1
1
F min = 1. 1 dB
F = 3 dB
OPT
BFG520; BFG520/X; BFG520/XR
2
2
2
2
2
2
5
5
45
45
45
45
5
5
5
5
MRA684
MRA685
0
0
1.0
0.8
0.6
0.4
0.2
0
1.0
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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