NSS40302PDR2G ON Semiconductor, NSS40302PDR2G Datasheet - Page 2

• Manufacturer Part Number: NSS40302PDR2G
• Description: TRANS NPN/PNP 40V 3A 8-SOIC
• Manufacturer: ON Semiconductor

Specifications of NSS40302PDR2G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 115mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 653mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1. FR−4 @ 10 mm
2. FR−4 @ 100 mm
3. Dual heated values assume total power is the sum of two equally powered devices.
THERMAL CHARACTERISTICS
SINGLE HEATED
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1)
T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 2)
Total Device Dissipation (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Total Device Dissipation (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Junction and Storage Temperature Range
A
A
= 25°C
= 25°C
T
Derate above 25°C
T
Derate above 25°C
A
A
= 25°C
= 25°C
2
, 1 oz. copper traces, still air.
2
, 1 oz. copper traces, still air.
Characteristic
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2
Symbol
T
R
R
R
R
J
P
P
P
P
, T
qJA
qJA
qJA
qJA
D
D
D
D
stg
−55 to +150
Max
576
217
676
185
653
191
783
160
4.6
5.4
5.2
6.3
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
mW
mW
°C