CM1620-06DE ON Semiconductor, CM1620-06DE Datasheet - Page 4

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CM1620-06DE

Manufacturer Part Number
CM1620-06DE
Description
IC LCD/CAM EMI FILTER 6CH 12DFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of CM1620-06DE

Resistance (ohms)
100
Capacitance
8.5pF
Power (watts)
0.1W, 1/10W
Package / Case
12-UDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Tolerance
-
SYMBOL
A
800MHz - 6GHz
C
V
A
V
R
I
V
DIODE
LEAK
TOTAL
R
C
f
1GHz
ESD
DYN
SIG
C
Note 1: T
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
In-system ESD Withstand Voltage
Dynamic Resistance
Cut-off Frequency
Absolute Attenuation @ 1GHz from 0dB
Absolute Attenuation @ 800MHz to
a) Human Body Model, MIL-STD-883,
b) Contact Discharge per IEC 61000-4-
Positive
Negative
Z
Level
6GHz from 0dB Level
A
Method 3015
2 Level 4
=25
SOURCE
°
C unless otherwise specified.
= 50Ω, Z
ELECTRICAL OPERATING CHARACTERISTICS
LOAD
= 50Ω
Rev.2 | Page 4 of 15 | www.onsemi.com
CONDITIONS
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I
V
I
See Note 2
Channel R = 100Ω,
Channel C = 17pF
Z
DC Bias = 0V; See Notes 1 and 3
Z
DC Bias = 0V; See Notes 1 and 3
DIODE
LOAD
SOURCE
SOURCE
DIODE
= 10mA
= 10μA
=
= 50Ω, Z
= 50Ω, Z
+
3.3V
LOAD
LOAD
= 50Ω,
= 50Ω,
MIN
±30
±15
5.6
80
14
(NOTE1)
TYP
100
200
-30
-25
8.5
6.0
0.1
6.8
2.3
0.9
17
MAX
120
1.0
9.0
22
CM1620
UNITS
MHz
μA
pF
pF
kV
kV
dB
dB
Ω
Ω
Ω
V
V

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