STM8S903K3U3 STMicroelectronics, STM8S903K3U3 Datasheet - Page 68

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STM8S903K3U3

Manufacturer Part Number
STM8S903K3U3
Description
IC MCU 8BIT 8KB FLASH 32UFQFPN
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet

Specifications of STM8S903K3U3

Featured Product
STM32 Cortex-M3 Companion Products
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
28
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
640 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
*
Core
STM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Electrical characteristics
10.3.6
68/113
Symbol
V
IL
I/O port pin characteristics
General characteristics
Subject to general operating conditions for V
pins must be kept at a fixed voltage: using the output mode of the I/O for example or an
external pull-up or pull-down resistor.
Symbol
Parameter
Input low level voltage
t
N
t
I
(1)
(2)
even when a write/erase operation addresses a single byte.
erase
RET
DD
RW
Data based on characterization results, not tested in production.
The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes
Parameter
1 block (64 bytes)
Erase time for 1 block
(64 bytes)
Erase/write cycles
(program memory)
Erase/write cycles
(data memory)
Data retention (program
and data memory) after 10k
erase/write cycles at
T
Data retention (data
memory) after 300k
erase/write cycles at
T
Supply current (Flash
programming or erasing
for 1 to 128 bytes)
A
A
= +55 °C
= +125 °C
Table 39: I/O static characteristics
(2)
(2)
Conditions
V
DocID15590 Rev 5
DD
= 5 V
Conditions
T
T
T
T
A
A
RET
RET
= +85 °C
= +125 °C
DD
= 55°C
= 85°C
and T
A
unless otherwise specified. All unused
Min
-0.3 V
Min
10 k
300 k
20
1
STM8S903K3 STM8S903F3
(1)
Typ
Typ
3
1 M
2
Max
0.3 x
V
DD
Max
3.33
Unit
V
Unit
cycles
years
mA

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