STM8S207C8T3 STMicroelectronics, STM8S207C8T3 Datasheet - Page 88

• Manufacturer Part Number: STM8S207C8T3
• Description: IC MCU 8BIT 64KB FLASH 48LQFP
• Manufacturer: STMicroelectronics
• Series: STM8Sr

Specifications of STM8S207C8T3

• Featured Product: STM32 Cortex-M3 Companion Products
• Core Processor: STM8
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 1.5K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.95 V ~ 5.5 V
• Data Converters: A/D 10x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 48-LFQFP
• Core: STM8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
Table 48.
1. Data based on characterization results, not tested in production.
88/105
Symbol
S
EMI
Peak level
SAE EMI
level
Parameter
Electromagnetic interference (EMI)
Emission tests conform to the SAE IEC 61967-2 standard for test software, board layout and
pin loading.
EMI data
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the JESD22-A114A/A115A standard. For more details, refer to the application
note AN1181.
Table 49.
1. Data based on characterization results, not tested in production.
V
V
Symbol
ESD(CDM)
ESD(HBM)
V
T
LQFP80 package
conforming to SAE IEC
61967-2
A
Electrostatic discharge voltage
(Human body model)
Electrostatic discharge voltage
(Charge device model)
DD
ESD absolute maximum ratings
25 °C
General conditions
5 V
Ratings
Doc ID 14733 Rev 11
0.1MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI level
frequency band
Conditions
Monitored
T
JESD22-A114
T
JESD22-C101
A
A
 25°C, conforming to
25°C, conforming to
Conditions
8 MHz/
8 MHz
15
18
-1
STM8S207xx, STM8S208xx
2
Max f
Class
16 MHz
8 MHz/
HSE
IV
A
2.5
20
21
1
/f
CPU
Maximum
value
24 MHz
8 MHz/
(1)
2000
1000
2.5
24
16
4
(1)
dBµV
Unit
Unit
V
V