PC28F256P30BFA NUMONYX, PC28F256P30BFA Datasheet - Page 57

• Manufacturer Part Number: PC28F256P30BFA
• Description: IC FLASH 256MBIT 100NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of PC28F256P30BFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Package: 64EZBGA
• Cell Type: NOR
• Density: 256 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 1.8 V
• Sector Size: 32KByte x 4|128KByte x 255
• Timing Type: Asynchronous|Synchronous
• Interface Type: Parallel|Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 898884; 898884; PC28F256P30BF 898884

P30-65nm
Figure 23: Asynchronous Page-Mode Read Timing
Note:
Figure 24: Synchronous Single-Word Array or Non-array Read Timing
1.
2.
Datasheet
57
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
A[Max:4] [A]
DATA [D/Q]
WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
WAIT [T]
OE# [G]
CE# [E]
A[3:0]
ADV#
R105
R105
R301
R303
R105
R105
R101
R104
R104
R101
R102
R6
R2
R3
R15
R306
R4
0
R106
R7
Q1
R2
R3
R4
R10
Valid Address
R108
1
Q2
R307
R106
R304
R10
2
R108
Q3
R10
R305
R312
R108
F
R9
R17
Q16
R8
R9
Order Number: 320002-10
R10
R8
R13
Mar 2010