PC28F00AP33TFA NUMONYX, PC28F00AP33TFA Datasheet - Page 54

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PC28F00AP33TFA

Manufacturer Part Number
PC28F00AP33TFA
Description
IC FLASH 1GBIT P33 65NM 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of PC28F00AP33TFA

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1G (64M x 16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
904253
904253
PC28F00AP33TF 904253

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PC28F00AP33TFA
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 21: Synchronous Single-Word Array or Non-array Read Timing for Easy BGA
Notes:
1.
2.
Figure 22: Continuous Burst Read, showing an Output Delay Timing for Easy BGA
Notes:
1.
2.
Datasheet
56
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
OE# [G]
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
At the end of Word Line; the delay incurred when a burst access crosses a 16-word boundary and the starting address is
not 4-word boundary aligned. See
page 40
CLK [C]
CE# [E]
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
CLK [C]
CE# [E]
.
for more information.
R105
R105
R301
R302
R303
R101
R102
R105
R105
R306
R106
R301
R303
R15
R104
R104
R101
R102
R2
R3
R7
R15
R306
Section 11.2.3, “End of Word Line (EOWL) Considerations” on
R4
R106
R7
R307
R304
R2
R3
R4
R312
R305
R307
R304
R305
R304
R305
R312
R9
R17
R8
R305
R304
Order Number: 208043-05
R304
P33-65nm
R305
Apr 2010

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