STW8Q2PA-S0-GA Seoul Semiconductor Inc, STW8Q2PA-S0-GA Datasheet - Page 4

• Manufacturer Part Number: STW8Q2PA-S0-GA
• Description: LED WARM WHITE 3000K 100MA SMD
• Manufacturer: Seoul Semiconductor Inc

Specifications of STW8Q2PA-S0-GA

• Lumens @ Current - Max: 44lm
• Lumens/watt @ Current - Test: 91lm/W
• Color: White, Warm
• Current - Test: 100mA
• Luminous Flux @ Current - Test: 29lm
• Current - Max: 160mA
• Voltage - Forward (vf) Typ: 3.2V
• Wavelength: 3000K
• Lens Style/size: Rectangle with Flat Top
• Viewing Angle: 120°
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 897-1074-2; STW8Q2PA-SO-GA

(2600~3700K)
Luminous Intensity*
(3700~7000K)
Forward Voltage *
Reverse Voltage
Luminous Intensity*
Color Correlated Temperature
Viewing Angle
Color Rendering Index*
ESD (HBM)
Thermal resistance
Forward Current
Operating Temperature
Storage Temperature
Junction Temperature
Power Dissipation
Peak Forward Current
[1] Forward current is 50mA per die for parallel inner circuit.
[2] The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
[3] 2
[4] Thermal resistance: R
* Tolerance : V
[Note] All measurements were made under the standardized environment of SSC.
[1] Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
[2] IFM was measured at Tw≤1 msec of pulse width and D≤1/10 of duty ratio.
[3] LED’s properties might be different from suggested values like above and below tables if operation condition
Package Total Forward Current is 100mA
with the mechanical axis of the LED package.
will be exceeded our parameter range.
Θ
1/2
3. Electro-Optical characteristics
2. Absolute maximum ratings
is the off-axis where the luminous intensity is 1/2 of the peak intensity.
Parameter
F
[3]
:±0.1V, I
Parameter
[1]
[4]
[2]
[2]
th
V
JS (Junction / solder)
:±10%, Ra :±3, x,y :±0.01
Symbol
2
R
CCT
Θ
Ra
V
th
V
I
I
v
v
R
1/2
JS
F
1.5k Ω ;100pF
Symbol
Condition
I
I
I
I
I
I
I
F
F
F
F
F
F
F
I
I
=100mA
=100mA
=100mA
=100mA
=100mA
=100mA
=100mA
R
FM
T
[1]
T
P
=5mA
T
I
opr
stg
F
d
j
[2]
2,600
Min.
2.9
-40~+100
75
-40~+85
1
-
-
-
-
-
Value
Document No. : SSC-QP-7-07-24
592
160
300
125
www.seoulsemicon.com
www.seoulsemicon.com
Typ.
120
3.2
0.9
8.5
9.0
80
15
-
-
7,000
Max.
3.4
1.2
-
-
-
-
-
-
October 2010
October 2010
Unit
mW
mA
mA
℃
℃
℃
ºC/W
Rev. 05
Rev. 05
Unit
deg.
KV
cd
V
V
K
-