SI4942DY-T1-E3 Vishay, SI4942DY-T1-E3 Datasheet

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SI4942DY-T1-E3

Manufacturer Part Number
SI4942DY-T1-E3
Description
MOSFET Small Signal 40V 7.4A 2.1W 21mohm @ 10V
Manufacturer
Vishay
Datasheet

Specifications of SI4942DY-T1-E3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.3 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
21mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4942DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4942DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71887
S09-0704-Rev. D, 27-Apr-09
Ordering Information:
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
40
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4942DY -T1-E3
Si4942DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
T op V i e w
0.028 at V
0.021 at V
SO-8
R
DS(on)
J
a
= 150 °C)
GS
a
GS
Dual N-Channel 40-V (D-S) MOSFET
(Ω)
8
7
6
5
= 4.5 V
= 10 V
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
I
= 25 °C, unless otherwise noted
D
7.4
6.4
Steady State
Steady State
(A)
T
T
L = 0.1 mH
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Low Power Synchronous Rectifier
• Automotive 12 V Systems
Symbol
Symbol
T
R
R
Definition
J
V
V
I
I
P
, T
I
DM
thJA
thJF
AS
I
DS
GS
D
S
D
stg
G
1
N-Channel MOSFET
®
Power MOSFET
Typical
10 s
D
S
7.4
5.8
1.8
2.1
1.3
50
90
28
1
1
- 55 to 150
± 20
40
30
25
Steady State
G
Maximum
2
110
5.3
4.3
0.9
1.1
0.7
60
34
N-Channel MOSFET
Vishay Siliconix
Si4942DY
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4942DY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4942DY -T1-E3 (Lead (Pb)-free) Si4942DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4942DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71887 S09-0704-Rev. D, 27-Apr-09 1600 1280 = 0.10 0.08 0.06 0. °C J 0.02 0.00 0.8 1.0 1.2 Si4942DY Vishay Siliconix C iss 960 640 C oss 320 C rss Drain-to-Source Voltage (V) DS Capacitance 1 7 1.6 1.4 1.2 1 ...

Page 4

... Si4942DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 250 µ 100 125 150 100 Limited DS(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71887. Document Number: 71887 S09-0704-Rev. D, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4942DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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