LM675T National Semiconductor, LM675T Datasheet - Page 2

• Manufacturer Part Number: LM675T
• Description: IC, OP-AMP, 5.5MHZ, 8V/µs, TO-220-5
• Manufacturer: National Semiconductor

Specifications of LM675T

• Op Amp Type: Low Offset Voltage
• No. Of Amplifiers: 1
• Bandwidth: 5.5MHz
• Slew Rate: 8V/µs
• Supply Voltage Range: 10V To 60V
• Amplifier Case Style: TO-220
• No. Of Pins: 5
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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Supply Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Open Loop Gain
PSRR
CMRR
Output Voltage Swing
Offset Voltage Drift Versus Temperature
Offset Voltage Drift Versus Output Power
Output Power
Gain Bandwidth Product
Max Slew Rate
Input Common Mode Range
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 2: Assumes T
Typical Applications
V
Supply Voltage
Input Voltage
Operating Temperature
S
S
=
=
±
±
25V, T
8V →
±
30V
A
=25˚C unless otherwise specified.
A
Parameter
equal to 70˚C. For operation at higher tab temperatures, the LM675 must be derated based on a maximum junction temperature of 150˚C.
Generating a Split Supply From a Single Supply
0˚C to +70˚C
−V
(Note 1)
P
V
V
V
R
∆V
V
R
R
THD = 1%, f
f
O
EE
OUT
CM
CM
CM
L
IN
L
S
= 20 kHz, A
S
=
= 8Ω
<
=
to V
=
= 0V
= 0V
= 0V
±
∞
= 0W
100 kΩ
±
30V
±
Ω
20V
CC
5V
Conditions
O
= 1 kHz, R
VCL
2
= 1000
Storage Temperature
Junction Temperature
Power Dissipation (Note 2)
Lead Temperature
ESD rating to be determined.
(Soldering, 10 seconds)
L
= 8Ω
Typical
±
±
0.2
5.5
18
50
90
90
90
25
25
25
00673903
1
8
21
22
Tested Limit
500 (max)
±
±
50 (max)
10 (max)
70 (min)
70 (min)
70 (min)
2 (max)
18 (min)
20 (min)
20
−65˚C to +150˚C
150˚C
260˚C
µV/˚C
Units
µV/W
30W
MHz
V/µs
mA
mV
µA
nA
dB
dB
dB
W
V
V