M57161L-01 Powerex Inc, M57161L-01 Datasheet - Page 7

• Manufacturer Part Number: M57161L-01
• Description: HYBRID IC, IGBT DRIVER, 7A, 28-SIP (15 LEADS)
• Manufacturer: Powerex Inc

Specifications of M57161L-01

• Device Type: IGBT
• Peak Output Current: 7A
• Output Resistance: 2.2ohm
• Input Delay: 0.4µs
• Output Delay: 1.3µs
• Supply Voltage Range: 14.3V To 15.7V
• Driver Case Style: SIP
• No. Of Pins: 15
• Input Type: Non-Inverting
• Delay Time: 400ns
• Current - Peak: 7A
• Number Of Configurations: 1
• Number Of Outputs: 1
• High Side Voltage - Max (bootstrap): 1200V
• Voltage - Supply: 14.3 V ~ 15.7 V
• Operating Temperature: -20°C ~ 60°C
• Mounting Type: Through Hole
• Package / Case: 28-SIP (15 Leads)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Configuration: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7. Driving Large IGBT Modules
modules, a gate driver with high pulse current capability is required. The M57161L-01 hybrid gate driver is
designed to perform this function as a stand-alone unit in most applications. However, for optimum performance
with very large modules, it may be necessary to add an output booster stage to the hybrid gate driver. A booster
stage is required when the desired series gate resistance is lower than the minimum R
driver’s data sheet.
complimentary transistor pair driving two parallel connected IGBT modules. The NPN and PNP booster transistors
(Q1, Q2) should be fast switching (t
current. Table 1 lists some combinations of booster transistors that can be used in the circuit shown in Figure 7.
The series resistor (R
base current and help to damp oscillations in the booster stage. In most applications R
= h
Note that if the application has parallel modules then the effective R
example, if there are 2 modules in parallel then R
the M57161L-01 it is also necessary to include a diode OR circuit so that the gates of the paralleled modules can
be independently monitored. An example of the diode OR is also shown in Figure 7.
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
M57161L-01
Hybrid IC for IGBT Gate Driver
MJD44H11
D44VH10
MJE15030
2SC4151
ZTX851
fe
NPN
x R
Q1
In order to achieve efficient, reliable operation of large IGBT modules or multiple parallel connected
Figure 7 is a schematic showing the M57161L-01 with an added booster stage consisting of a
G
, where h
1
+
+
150µF
MJD45H11
D45VH10
MJE15031
2SA1601
ZTX951
V
D
PNP
Q2
Figure 7 M57161L-01 Typical Application Circuit With Booster Stage
fe
Table 1 Booster Stage Transistors
O
+
is the minimum gain of the booster stage transistors and R
V
) connected from the driver’s output on pin 23 to the booster stage is used to limit the peak
IN
6
current
15A
20A
15A
30A
20A
FO
Peak
M57161L-01
150V
40V
80V
80V
80V
f
V
< 200nS) and have sufficient current gain to deliver the desired peak output
CEO
3.3k
17
ON Semiconductor
ON Semiconductor
ON Semiconductor
Shindengen
Zetex
+
Manufacturer
19
470µF
470Ω
O
2.2µF
= h
22
470µF
fe
x R
24
+
G
R
/2. When parallel connected modules are used with
D2-Pac
TO-220
TO-220
Isolated TO-220
TO-92
O
Package
27
G
Q1
Q2
C
29
must be used in the above equation. For
TRIP
2N4401
R
R
G
G
M57161L-01
G
4.7kΩ
1N4148
is the series gate resistance.
RTC
O
should be set so that R
G
specified on the gate
RTC
7
O