CAT25010VI-G CATALYST SEMICONDUCTOR, CAT25010VI-G Datasheet - Page 3

• Manufacturer Part Number: CAT25010VI-G
• Description: IC, EEPROM, 1KBIT, SERIAL, 10MHZ, SOIC-8
• Manufacturer: CATALYST SEMICONDUCTOR

Specifications of CAT25010VI-G

• Memory Size: 1Kbit
• Memory Configuration: 128 X 8 / 64 X 16
• Ic Interface Type: SPI
• Clock Frequency: 10MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4. AC Test Conditions:
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. t
7. t
8. All Chip Select (CS) timing parameters are defined relative to the positive clock edge (Figure 2). t
Table 5. A.C. CHARACTERISTICS
Table 6. POWER−UP TIMING
for die revision D and higher. The die revision D is identified by letter “D” or a dedicated marking code on top of the package. For
previous product revision (Rev. C) the t
Doc. No. MD-1006 Rev.
t
PUR
WC
t
t
WC
RI
FI
Symbol
Symbol
Input Pulse Voltages: 0.3 V
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 V
Output load: current source I
(Note 5)
(Note 5)
t
t
t
t
is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
f
t
t
t
t
t
t
WPH
(Note 7)
PUW
t
t
CNH
WPS
SCK
t
t
t
t
t
CSS
CSH
CNS
PUR
and t
t
WH
DIS
SU
t
WL
HD
CD
HO
CS
t
HZ
LZ
H
V
PUW
are the delays required from the time V
Clock Frequency
Data Setup Time
Data Hold Time
SCK High Time
SCK Low Time
HOLD to Output Low Z
Input Rise Time
Input Fall Time
HOLD Setup Time
HOLD Hold Time
Output Valid from Clock Low
Output Hold Time
Output Disable Time
HOLD to Output High Z
CS High Time
CS Setup Time
CS Hold Time
CS Inactive Setup Time
CS Inactive Hold Time
WP Setup Time
WP Hold Time
Write Cycle Time
Power−up to Read Operation
Power−up to Write Operation
U)
CC
OL max
(Notes 5, 6)
to 0.7 V
Parameter
(T
/I
OH max
A
CC
= −40°C to +125°C, unless otherwise specified.) (Notes 4, 8)
CSH
CC
; C
is defined relative to the negative clock edge (please refer to data sheet
L
= 50 pF
Parameter
CC
http://onsemi.com
is stable until the specified operation can be initiated.
3
V
CC
Min
100
DC
40
40
75
75
10
50
20
30
20
20
10
0
0
= 1.8 V − 5.5 V
Max
100
50
75
50
5
2
2
5
T
V
Min
A
DC
20
20
40
40
10
20
15
20
15
15
10
60
CSH
CC
0
0
= −405C to +855C
= 2.5 V − 5.5 V
timing specification is valid
Max
1
1
Max
10
25
40
20
25
2
2
5
Units
ms
ms
Units
MHz
ms
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns