AM29F800BB-55EF Spansion Inc., AM29F800BB-55EF Datasheet - Page 2
![IC, FLASH, 8MBIT, 55NS, TSOP-48](/photos/19/5/190512/4243308_sml.jpg)
AM29F800BB-55EF
Manufacturer Part Number
AM29F800BB-55EF
Description
IC, FLASH, 8MBIT, 55NS, TSOP-48
Manufacturer
Spansion Inc.
Datasheets
1.AM29F800BT-90SC.pdf
(44 pages)
2.AM29F800BB-90EI.pdf
(44 pages)
3.AM29F800BB-55EF.pdf
(45 pages)
4.AM29F800BB-70EF.pdf
(41 pages)
5.AM29F800BB-90EE.pdf
(45 pages)
Specifications of AM29F800BB-55EF
Memory Type
Flash
Memory Size
8Mbit
Memory Configuration
1M X 8 / 512K X 16
Access Time
55ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
TSOP
No. Of Pins
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F800BB-55EF
Manufacturer:
AMD
Quantity:
20 000
of the device is similar to reading from 12.0 Volt Flash
or EPROM devices.
The Am29F800 is programmed by executing the pro-
gram command sequence. This will invoke the Embed-
ded Program Algorithm which is an internal algorithm
that automatically times the program pulse widths and
verifies proper cell margin. Erase is accomplished by
executing the erase command sequence. This
will invoke the Embedded Erase Algorithm which is an
internal algorithm that automatically preprograms the
array if it is not already programmed before executing
the erase operation. During erase, the device automat-
ically times the erase pulse widths and verifies proper
cell margin.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and re-
programmed without affecting the data contents of
other sectors. A sector is typically erased and verified
within 1.5 seconds. The Am29F800 is erased when
shipped from the factory.
The Am29F800 device also features hardware sector
protection. This feature will disable both program and
erase operations in any combination of nineteen sec-
tors of memory.
AMD has implemented an Erase Suspend feature that
enables the user to put erase on hold for any period of
time to read data from or program data to a sector that
was not being erased. Thus, true background erase
can be achieved.
2
P R E L I M I N A R Y
Am29F800T/Am29F800B
The device features single 5.0 Volt power supply oper-
ation for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. A low V
tomatically inhibits write operations during power tran-
sitions. The end of program or erase is detected by the
RY/BY pin. Data Polling of DQ7, or by the Toggle Bit
(DQ6). Once the end of a program or erase cycle has
been completed, the device automatically resets to the
read mode.
The Am29F800 also has a hardware RESET pin.
When this pin is driven low, execution of any Embed-
ded Program Algorithm or Embedded Erase Algorithm
will be terminated. The internal state machine will then
be reset into the read mode. The RESET pin may be
tied to the system reset circuitry. Therefore, if a system
reset occurs during the Embedded Program Algorithm
or Embedded Erase Algorithm, the device will be auto-
matically reset to the read mode and will have errone-
ous data stored in the address locations being
operated on. These locations will need re-writing after
the Reset. Resetting the device will enable the sys-
tem’s microprocessor to read the boot-up firmware
from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The Am29F800 memory electrically erases all
bits within a sector simultaneously via Fowler-Nor-
dhiem tunneling. The bytes/words are programmed
one byte/word at a time using the EPROM program-
ming mechanism of hot electron injection.
CC
detector au-
8/18/97