AM29F040B-70EF Spansion Inc., AM29F040B-70EF Datasheet

IC, FLASH, 40MBIT, 70NS, TSOP-32

AM29F040B-70EF

Manufacturer Part Number
AM29F040B-70EF
Description
IC, FLASH, 40MBIT, 70NS, TSOP-32
Manufacturer
Spansion Inc.
Datasheets

Specifications of AM29F040B-70EF

Memory Type
Flash
Memory Size
40Mbit
Memory Configuration
512K X 8
Access Time
70ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
TSOP
No. Of Pins
32
Cell Type
NOR
Density
4Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
19b
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
512K
Supply Current
30mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29F040B-70EF
Manufacturer:
VICOR
Quantity:
43
Part Number:
AM29F040B-70EF
Manufacturer:
AMD
Quantity:
20 000
Am29F040B
Data Sheet
Am29F040B Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21445
Revision E
Amendment 8
Issue Date November 11, 2009

Related parts for AM29F040B-70EF

AM29F040B-70EF Summary of contents

Page 1

... For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 21445 Revision E Amendment 8 Am29F040B Cover Sheet Issue Date November 11, 2009 ...

Page 2

... This page left intentionally blank Am29F040B 21445_E8 November 11, 2009 ...

Page 3

... DATA SHEET Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V ± 10% for read and write operations • — Minimizes system level power requirements • Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F040 device • ...

Page 4

... GENERAL DESCRIPTION The Am29F040B Mbit, 5.0 volt-only Flash mem- ory organized as 524,288 Kbytes of 8 bits each. The 512 Kbytes of data are divided into eight sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F040B is offered in 32-pin PLCC or TSOP packages ...

Page 5

... Requirements for Reading Array Data ..................................... 7 Writing Commands/Command Sequences .............................. 7 Program and Erase Operation Status ...................................... 7 Standby Mode .......................................................................... 7 Output Disable Mode................................................................ 8 Table 2. Sector Addresses Table ......................................................8 Autoselect Mode....................................................................... 9 Table 3. Am29F040B Autoselect Codes (High Voltage Method) .......9 Sector Protection/Unprotection................................................. 9 Hardware Data Protection ........................................................ 9 Low V Write Inhibit ........................................................................ 9 CC Write Pulse “Glitch” Protection.......................................................... 9 Logical Inhibit ...

Page 6

... Note: See the “AC Characteristics” section for more information. BLOCK DIAGRAM State WE# Control Command Register CE# OE# V Detector CC A0–A18 - Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F040B Am29F040B -70 - DQ0–DQ7 Input/Output Buffers Data Latch STB Y-Gating Cell Matrix 21445E8 November 11, 2009 ...

Page 7

... Product Selector Guide for device speed ratings and voltage supply tolerances) November 11, 2009 21445E8 A14 6 28 A13 A11 A10 DQ7 32-Pin Standard TSOP LOGIC SYMBOL 19 A0–A18 CE# OE# WE# Am29F040B 32 OE# 31 A10 30 CE# 29 DQ7 28 DQ6 27 DQ5 26 DQ4 25 DQ3 DQ2 22 DQ1 21 DQ0 DQ0–DQ7 5 ...

Page 8

... Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 5.0 V Read, Program, and Erase Valid Combinations AM29F040B-55 AM29F040B-70 AM29F040B-90 Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ° ...

Page 9

... The command register it- self does not occupy any addressable memor y location. The register is composed of latches that store the commands, along with the address and data infor- Table 1. Am29F040B Device Bus Operations Operation Read Write CMOS Standby ...

Page 10

... The output pins are placed in the high imped- ance state. Table 2. Sector Addresses Table A17 A16 Am29F040B , output from the device is IH Address Range 00000h–0FFFFh 10000h–1FFFFh 20000h–2FFFFh 30000h–3FFFFh 40000h–4FFFFh 50000h–5FFFFh 60000h–6FFFFh 70000h–7FFFFh 21445E8 November 11, 2009 ...

Page 11

... V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector Table 3. Am29F040B Autoselect Codes (High Voltage Method) Description A18–A16 Manufacturer ID: AMD X Device ID: Am29F040B ...

Page 12

... The system can determine the status of the program operation by using DQ7 or DQ6. See “Write Operation Status” for informa- tion on these status bits. Am29F040B on address bit A9. ID 21445E8 November 11, 2009 ...

Page 13

... The system must rewrite the com- mand sequence and any additional sector addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the Am29F040B “Write for information on these status bits. for parameters, and to the Chip/ “DQ3: Sector Erase ...

Page 14

... Erase Suspend command can be written after the de- vice has resumed erasing. No Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” Am29F040B “Wr ite Operation Status” for more “Autoselect Command Sequence” START Write Erase Command Sequence Data Poll ...

Page 15

... Command Definitions Table 4. Am29F040B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note Manufacturer ID Device ID 4 Autoselect (Note 7) Sector Protect Verify 4 (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read. ...

Page 16

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 3. Data# Polling Algorithm Am29F040B “AC Characteristics” section Yes No Yes ...

Page 17

... DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure condition that indicates the program or erase cycle was not successfully completed. Am29F040B 5 to compare outputs “DQ2: Toggle Bit II” explains the “ ...

Page 18

... Operation Not Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 4. Toggle Bit Algorithm Am29F040B (Note 1) No Yes Yes (Notes ...

Page 19

... Exceeded Timing Limits” November 11, 2009 21445E8 Table 5. Write Operation Status DQ7 (Note 1) DQ6 DQ7# Toggle 0 Toggle 1 No toggle Data Data DQ7# Toggle for more information. Am29F040B DQ5 DQ2 (Note 2) DQ3 (Note 1) 0 N/A No toggle 0 1 Toggle 0 N/A Toggle Data Data Data ...

Page 20

... V to +5. +0.8 V –0.5 V –2 200 mA Figure 5. Maximum Negative to –2 0.5 V. During +2 +0 for ± 10% devices . . . . . . . . . . . +4 +5 Operating ranges define those limits between which the functionality of the device is guaranteed. Am29F040B Overshoot Waveform Figure 6. Maximum Positive Overshoot Waveform 21445E8 November 11, 2009 ...

Page 21

... VIH CE ± 12.0 mA Min –2.5 mA Min –100 μ Min CCmax Am29F040B Min Typ Max Max ±1.0 50 Max ±1 0.4 1.0 –0.5 0.8 2 0.5 CC 10.5 12.5 0.45 2.4 3.2 4.2 Min Typ Max ±1.0 Max 50 ±1.0 Max –0.5 0.8 ...

Page 22

... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F040B -55 All others Unit 1 TTL gate L 30 100 0.0–3.0 0.45– ...

Page 23

... OE#, Whichever Occurs First Notes: 1. See Figure 7 and Table 6 for test conditions. 2. Output driver disable time. 3. Not 100% tested. November 11, 2009 21445E8 Description Test Setup Read Toggle and Data# Polling Am29F040B Speed Options (Note 1) -55 -70 -90 Unit Min IL, Max Max ...

Page 24

... Addresses CE# OE# WE# Outputs Addresses Stable t ACC OEH t CE HIGH Z Figure 8. Read Operation Timings Am29F040B HIGH Z Output Valid 21445E8 November 11, 2009 ...

Page 25

... Set Up Time (Note 1)) VCS CC Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” November 11, 2009 21445E8 Description 1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min section for more information. Am29F040B Speed Options -55 -70 -90 Unit ...

Page 26

... A0h is the true data at the program address. OUT Figure 9. Program Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F040B Read Status Data (last two cycles WHWH1 Status D OUT Read Status Data WHWH2 In Complete Progress 21445E8 November 11, 2009 ...

Page 27

... Figure 12. Toggle Bit Timings (During Embedded Algorithms) November 11, 2009 21445E8 Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F040B VA High Z Valid Data True High Z True Valid Data VA VA Valid Status Valid Data (stops toggling) 25 ...

Page 28

... Note: Both DQ6 and DQ2 toggle with OE# or CE#. See the text on DQ6 and DQ2 in the section information Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 13. DQ2 vs. DQ6 Am29F040B Erase Resume Erase Erase Complete Read “Write Operation Status” for more 21445E8 November 11, 2009 ...

Page 29

... Sector Erase Operation t t WHWH2 WHWH2 (Note 2)) Notes: 1. Not 100% tested. 2. See the “Erase and Programming Performance” November 11, 2009 21445E8 Description Min Min Min Min Min Min Min Min Min Min Typ Typ section for more information. Am29F040B Speed Options -55 -70 -90 Unit ...

Page 30

... Figure 14. Alternate CE# Controlled Write Operation Timings for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F040B PA DQ7# D OUT = Array Data. OUT 21445E8 November 11, 2009 ...

Page 31

... Excludes system-level overhead (Note 3.6 10.8 sec ° 4.5 V (4.75 V for -55), 1,000,000 cycles 5.0 V, one pin at a time. CC Test Setup OUT Am29F040B Comments 1,000,000 cycles. Additionally, CC Min Max –1 1 –100 mA +100 mA Typ Max Unit 6 7 7.5 ...

Page 32

... Control Pin Capacitance IN2 Notes: 1. Sampled, not 100% tested. 2. Test conditions T = 25° 1.0 MHz. A DATA RETENTION Parameter Minimum Pattern Data Retention Time Test Setup OUT Test Conditions 150° C 125° C Am29F040B Typ Max Unit Min Unit 10 Years 20 Years 21445E8 November 11, 2009 ...

Page 33

... PHYSICAL DIMENSIONS PL 032—32-Pin Plastic Leaded Chip Carrier November 11, 2009 21445E8 Am29F040B Dwg rev AH; 10/99 31 ...

Page 34

... PHYSICAL DIMENSIONS (continued) TS 032—32-Pin Standard Thin Small Package Am29F040B Dwg rev AA; 10/99 21445E8 November 11, 2009 ...

Page 35

... Removed 32-pin Reverse TSOP diagrams and all ref- erences from Ordering Information. Revision E4 (May 18, 2006) Added migration and obsolescence information. specifi- CC Revision E5 (November 1, 2006) ”. Deleted migration and obsolescence text. Revision E6 (March 3, 2009) Global Added obsolescence information. Am29F040B and changed OE# waveform to start at 33 ...

Page 36

... Other names used are for informational purposes only and may be trademarks of their respective owners Revision E8 (November 11, 2009) Global Removed 120 ns speed option. Removed all commercial temperature range options. Removed PDIP package option. ® ® , the Spansion logo, MirrorBit Am29F040B ® , MirrorBit Eclipse™, ORNAND™, 21445E8 November 11, 2009 ...

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