AS6C1008-55SIN ALLIANCE MEMORY, AS6C1008-55SIN Datasheet

SRAM, 1MB, 2.7V-5.5V, 128KX8, SOP32

AS6C1008-55SIN

Manufacturer Part Number
AS6C1008-55SIN
Description
SRAM, 1MB, 2.7V-5.5V, 128KX8, SOP32
Manufacturer
ALLIANCE MEMORY
Datasheet

Specifications of AS6C1008-55SIN

Memory Size
1Mbit
Access Time
55ns
Supply Voltage Range
2.7V To 5.5V
Memory Case Style
SOP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating
RoHS Compliant
Memory Configuration
128K X 8
Rohs Compliant
Yes

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FEATURES
FUNCTIONAL BLOCK DIAGRAM
DQ0-DQ7
Operating current:10 mA (TYP.)
Standby current: 1 µA (TYP .)
Single 2.7V ~ 5.5V po we r supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully s tatic operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All products are ROHS Compliant
Package : 32-pin 450 mil SOP
A0-A16
Access time :55ns
Low powe r consumption:
February 2007
02/February/07, v 1.0
WE#
CE#
CE2
OE#
Vcc
Vss
32-pin 600 mil P-DIP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
DECODER
CONTROL
I/O DATA
CIRCUIT
CIRCUIT
128K X 8 BIT LOW POWER CMOS SRAM
MEMORY ARRAY
COLUMN I/O
128Kx8
Alliance Memory Inc.
GENERA L DESCRIPTION
The AS6C1008 is a 1,048,57 6 -bit low powe r
CMOS static random access me mory organized as
131,072 words by 8 bits . It is fabricated using ve ry
high performance, high reliability CMO S technolo gy. Its
sta ndby current is stable within the ra nge of
operating temperature.
The AS6C1008 is well designed for very low power
system applications, a nd particula rly well suited for
battery back-u p non-volatile memory a pplication.
The AS6C1008 operates from a single power supply
of 2.7V ~ 5.5V.
.
PIN DESCRIPTION
SYMBOL
A0 - A16
DQ0 – DQ7
CE#, CE2
WE#
OE#
V
V
NC
C C
SS
®
DESCRIPTION
Addres s Inputs
Da ta Inputs /Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Pow er Supply
G round
No C onnection
Page 1 of 14
AS6C1008

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AS6C1008-55SIN Summary of contents

Page 1

... CIRCUIT OE# 02/February/07, v 1.0 ® GENERA L DESCRIPTION The AS6C1008 is a 1,048,57 6 -bit low powe r CMOS static random access me mory organized as 131,072 words by 8 bits . It is fabricated using ve ry high performance, high reliability CMO S technolo gy. Its sta ndby current is stable within the ra nge of operating temperature ...

Page 2

... NC NC DQ2 G DQ7 OE# CE# A16 A15 DQ3 H A9 A10 A14 TFBGA . 02/February/07, v 1.0 ® Vcc A15 CE2 WE A13 AS6C1008 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 Alliance Memory Inc. AS6C1008 -I/sTSOP Page A10 CE # DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 ...

Page 3

... CE2 V -0.2V, ≦ ≧ 0mA I/O other pins at 0. -0.2V CC CE# V -0.2V C* ≧ CE2 ≦ 0.2V I* Alliance Memory Inc. AS6C1008 RATING UNIT -0 70(C grade) ºC -40 to 85(I grade) ºC -65 to 150 260 ºC SUPPLY CURRENT High-Z I SB1 High-Z ...

Page 4

... º 1.0MHz) SYMBOL MIN I 1.5V C =30pF + 1TTL SYM ACE CLZ t * OLZ t * CHZ t * OHZ t OH SYM WHZ Alliance Memory Inc. AS6C1008 MAX UNIT 0. -1mA/2mA OH OL AS6C1008-55 MIN. MAX AS6C1008-55 MIN. MAX Page UNIT UNIT ...

Page 5

... Data Valid ACE OLZ t CLZ Data Valid CE2 = high ., . CE2 = high; otherwise 5pF. Transition is measured ±500mV from steady state less than less than t CHZ CLZ OHZ Alliance Memory Inc. AS6C1008 OHZ t CHZ High-Z is the limiting parameter. AA OLZ. Page ...

Page 6

... C = 5pF. Transition is measured ±500mV from steady state. OW WHZ L 02/February/07, v 1.0 ® WHZ High-Z ( Data Valid WHZ High-Z ( Data Valid must be greater than t WP WHZ Alliance Memory Inc. AS6C1008 ( allow the drivers to turn off and data Page ...

Page 7

... CC or CE2 ≦ 0. 1.5V C 0.2V ≧ CE2 ≦ 0.2V I** See Data Retention Waveforms (below) CE# ( controlled) V ≧ 1.5V DR CE# ≧ cc-0.2V V (CE2 controlled) V ≧ 1.5V DR CE2 ≦ 0.2V Alliance Memory Inc. AS6C1008 MIN. TYP. MAX. UNIT 1 Vcc(min Vcc(min ...

Page 8

... E 0.445 ± 0.005 11.303 ± 0.127 E1 0.555 ± 0.012 14.097 ± 0.305 e 0.050(TYP) 1.270(TYP) L 0.0347 ± 0.008 0.881 ± 0.203 L1 0.055 ± 0.008 1.397 ± 0.203 S 0.026(MAX) 0.660 (MAX) y 0.004(MAX) 0.101(MAX Θ 0 -10 0 -10 Alliance Memory Inc. AS6C1008 Page ...

Page 9

... L 0.130 ± 0.010 3.302 ± 0.254 S 0.075 ± 0.010 1.905 ± 0.254 Q1 0.070 ± 0.005 1.778 ± 0.127 Alliance Memory Inc. AS6C1008 MM(REF) 0.254 (MIN) 2.540 (TYP) Page ...

Page 10

... E 0.315 ± 0.004 8.00 ± 0.10 e 0.020 (TYP) 0.50 (TYP) HD 0.787 ± 0.008 20.00 ± 0.20 L 0.0197 ± 0.004 0.50 ± 0.10 L1 0.0315 ± 0.004 0.08 ± 0.10 y 0.003 (MAX) 0.076 (MAX Θ 0 ~ ~ 5 Alliance Memory Inc. AS6C1008 Page ...

Page 11

... L 0.0197 ± 0.004 0.50 ± 0.10 L1 0.0315 ± 0.004 0.8 ± 0.10 y 0.003 (MAX) 0.076 (MAX Θ 0 ~ ~ 5 Alliance Memory Inc. AS6C1008 12° (2x) y Seating Plane 12° (2X) SEATING PLANE L 12° (2X) L1 "A" DETAIL VIEW o Page GAUGE PLANE 0 ...

Page 12

... February 2007 128K X 8 BIT LOW POWER CMOS SRAM 36 ball 6mm × 8mm TFBGA Package Outline Dimension 02/February/07, v 1.0 Alliance Memory Inc. AS6C1008 Page ...

Page 13

... February 2007 ORDERING INFORMATION Ordering Codes Alliance Organization VCC range AS6C1008-55PCN 128K X 8 AS6C1008-55SIN 128K X 8 AS6C1008-55TIN 128K X 8 AS6C1008-55STIN 128K X 8 AS6C1008-55BIN 128K X 8 Part numbering system AS6C 1008 - 55 Package Options pin 600 mil P-DIP low Device pin 450 mil SOP ...

Page 14

... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. 02/February/07, v 1.0 ® Alliance Memory Inc. AS6C1008 Copyright © Alliance Memory All Rights Reserved Part Number: AS6C1008 Document Version: v. 1.0 Page ...

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