BS62LV256SCG70 BSI (BRILLIANCE SEMICONDUCTOR), BS62LV256SCG70 Datasheet - Page 3

SRAM, 32KX8, 3-5V, COMM, 70NS, 28SOP

BS62LV256SCG70

Manufacturer Part Number
BS62LV256SCG70
Description
SRAM, 32KX8, 3-5V, COMM, 70NS, 28SOP
Manufacturer
BSI (BRILLIANCE SEMICONDUCTOR)
Datasheet

Specifications of BS62LV256SCG70

Memory Size
256Kbit
Clock Frequency
10MHz
Access Time
70ns
Supply Voltage Range
2.4V To 5.5V
Memory Case Style
SOP
No. Of Pins
28
Operating Temperature Range
0°C To +70°C
Memory Configuration
32K X 8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS62LV256SCG70
Manufacturer:
BSI
Quantity:
5 530
Part Number:
BS62LV256SCG70
Manufacturer:
BSI
Quantity:
5 530
R0201-BS62LV256
DC ELECTRICAL CHARACTERISTICS (T
1. Typical characteristics are at T
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
DATA RETENTION CHARACTERISTICS (T
1. Typical characteristics are at V
2. t
3. I
LOW V
PARAMETER
SYMBOL
RC
CCRD(Max.)
I
NAME
I
CCSB1
CCDR
I
= Read Cycle Time.
I
t
V
V
V
I
CCSB
V
V
CE
V
CC
V
I
CC1
CDR
I
t
LO
IL
OH
DR
CC
CC
OL
R
IH
IL
(5)
CC
(3)
(6)
is 0.3uA at T
DATA RETENTION WAVEFORM (CE Controlled)
CC
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
+1.0V in case of pulse width less than 20 ns.
Power Supply
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current – TTL
Standby Current – CMOS
CC
for Data Retention
PARAMETER
PARAMETER
A
=70
O
C.
A
CC
=25
=1.5V, T
O
C and not 100% tested.
A
=25
V
V
CE= V
V
V
V
CE = V
I
CE = V
I
CE = V
I
CE≧V
V
CE≧V
V
CE≧V
V
See Retention Waveform
IH
DQ
DQ
DQ
t
IN
IN
IN
I/O
CC
CC
IN
O
CDR
V
≧V
≧V
C and not 100% tested.
≧V
= 0mA, f = F
= 0mA, f = 1MHz
= 0mA
CC
= 0V to V
= 0V to V
= Max, I
= Min, I
CC
CC
IH
CC
CC
CC
CC
IL
IL
IH
A
, or OE = V
,
,
,
-0.2V or V
-0.2V or V
-0.2V,
-0.2V,
-0.2V,
-0.2V or V
A
= -40
TEST CONDITIONS
TEST CONDITIONS
= -40
OH
CC
OL
CC
= -0.5mA
= 0.5mA
MAX
O
Data Retention Mode
C to +85
O
(4)
IN
IN
C to +85
CE≧V
IN
3
IH
≦0.2V
≦0.2V
≦0.2V
V
,
DR
≧1.5V
CC
4. F
5. I
6. I
- 0.2V
O
C)
O
CC (MAX.)
CCSB1(MAX.)
MAX
C)
=1/t
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
is 20mA/35mA at V
RC.
=3.0V
=5.0V
=3.0V
=5.0V
=3.0V
=5.0V
=3.0V
=5.0V
is 0.4uA/4.0uA at V
V
-0.5
MIN.
MIN.
t
CC
RC
2.4
2.2
2.4
1.5
t
--
--
--
--
--
--
--
--
--
--
--
--
0
R
(2)
V
(2)
IH
CC
TYP.
TYP.
=3.0V/5.0V and T
CC
0.01
0.01
0.4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=3.0V/5.0V and T
(1)
(1)
BS62LV256
V
CC
MAX.
MAX.
5.5
0.8
0.4
1.0
2.0
0.7
5.0
0.4
+0.3
25
40
--
--
--
--
1
1
1
2
Revision
Oct.
A
(3)
=70
A
=70
O
UNITS
UNITS
C.
O
mA
mA
mA
uA
uA
uA
uA
C.
ns
ns
V
V
V
V
V
V
2008
2.7

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