LTC4357IDCB#PBF Linear Technology, LTC4357IDCB#PBF Datasheet - Page 5

• Manufacturer Part Number: LTC4357IDCB#PBF
• Description: CONTROLLER, DIODE, SMD, DFN-6, 4357
• Manufacturer: Linear Technology

Specifications of LTC4357IDCB#PBF

• Primary Input Voltage: 80V
• No. Of Outputs: 1
• Output Voltage: 80V
• Output Current: 80µA
• Voltage Regulator Case Style: DFN
• No. Of Pins: 6
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIN FUNCTIONS
Exposed Pad: Exposed Pad may be left open or connected
to GND.
GATE: Gate Drive Output. The GATE pin pulls high, enhanc-
ing the N-channel MOSFET when the load current creates
more than 25mV of voltage drop across the MOSFET.
When the load current is small, the gate is actively driven
to maintain 25mV across the MOSFET. If reverse current
develops more than –25mV of voltage drop across the
MOSFET, a fast pulldown circuit quickly connects the GATE
pin to the IN pin, turning off the MOSFET.
GND: Device Ground.
IN: Input Voltage and GATE Fast Pull-Down Return. IN is
the anode of the ideal diode and connects to the source
of the N-channel MOSFET. The voltage sensed at this pin
BLOCK DIAGRAM
IN
25mV
–
+
–
COMP
FPD
+
CHARGE PUMP
GND
is used to control the source-drain voltage across the
MOSFET. The GATE fast pulldown current is returned
through the IN pin. Connect this pin as close as possible
to the MOSFET source.
NC: No Connection. Not internally connected.
OUT: Drain Voltage Sense. OUT is the cathode of the ideal
diode and the common output when multiple LTC4357s
are confi gured as an ideal diode-OR. It connects to the
drain of the N-channel MOSFET. The voltage sensed at
this pin is used to control the source-drain voltage across
the MOSFET.
V
the V
through an RC hold-up circuit.
DD
: Positive Supply Input. The LTC4357 is powered from
DD
pin. Connect this pin to OUT either directly or
+
GATE
AMP
GATE
–
+
–
25mV
IN
OUT
V
4357 BD
DD
LTC4357
4357fb
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