SI4735-B20GM Silicon Laboratories Inc, SI4735-B20GM Datasheet - Page 4
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SI4735-B20GM
Manufacturer Part Number
SI4735-B20GM
Description
RECEIVER, RADIO, MULTIBAND, 20QFN
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI4735-B20GM.pdf
(24 pages)
Specifications of SI4735-B20GM
Frequency Range
520kHz To 21.85MHz
Rf Ic Case Style
QFN
No. Of Pins
20
Supply Voltage Range
2.7V To 5.5V
Applications
Audio Video Receivers, CD/DVD Players, Cellular Handsets, Emergency Radios
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Si473x-B20
1. Product Overview
The Si473x receivers are the industry's first fully-integrated multiband radio receiver ICs from antenna input to
audio output. They require minimal external components with no factory alignment. The Si473x receivers reduce
the receiver footprint by >90% versus traditional AM/FM solutions. The Si473x also offer best-in-class performance
with the most features. The high integration and complete system production test simplifies design-in, increases
system quality, and improves manufacturability.
The Si473x receivers include advanced seek algorithms, adjustable soft mute, auto-calibrated digital tuning, and
FM stereo processing. In addition, the Si473x ICs provide a programmable reference clock and an I2C-compatible
2-wire control interface.
The Si4731/35/37/39 incorporates a digital processor for the European Radio Data System (RDS) and the North
American Radio Broadcast Data System (RBDS), including all required symbol decoding, block synchronization,
error detection, and error correction functions. Using these features, the Si4731/35/37/39 enables broadcast data
such as station identification and song name to be displayed to the end user.
2. Electrical Specifications
Table 1. Recommended Operating Conditions
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V
otherwise stated.
Parameter
DD
= 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
V
Symbol
V
DDRISE
IORISE
V
V
Rev. 0.5
T
DD
IO
A
Test Condition
Min
–20
2.7
1.5
10
10
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
µs
µs
C
V
V