BS62LV4006SIP55 BSI (BRILLIANCE SEMICONDUCTOR), BS62LV4006SIP55 Datasheet - Page 3

SRAM 4M, 512KX8, 2.4-5.5V, SOP32

BS62LV4006SIP55

Manufacturer Part Number
BS62LV4006SIP55
Description
SRAM 4M, 512KX8, 2.4-5.5V, SOP32
Manufacturer
BSI (BRILLIANCE SEMICONDUCTOR)
Datasheet

Specifications of BS62LV4006SIP55

Memory Size
4Mbit
Access Time
55ns
Supply Voltage Range
2.4V To 5.5V
Memory Case Style
SOP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating
RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BS62LV4006SIP55
Manufacturer:
BSI
Quantity:
2 051
Part Number:
BS62LV4006SIP55
Manufacturer:
BSI
Quantity:
20 000
n DC ELECTRICAL CHARACTERISTICS (T
n DATA RETENTION CHARACTERISTICS (T
n LOW V
R0201-BS62LV4006
1. Typical characteristics are at T
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
1. V
2. t
3. I
PARAMETER
SYMBOL
RC
CCRD(Max.)
CC
I
NAME
I
CCSB1
CCDR
I
= Read Cycle Time.
I
=1.5V, T
V
t
V
CE
V
V
I
CCSB
V
V
CC
V
I
CC1
CDR
I
t
LO
CC
IL
OH
CC
OL
DR
R
IH
IL
(5)
CC
(3)
(6)
is 1.0uA at T
DATA RETENTION WAVEFORM (1) (CE Controlled)
A
=25
CC
+1.0V in case of pulse width less than 20 ns.
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Power Supply
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current – TTL
Standby Current – CMOS
CC
O
C and not 100% tested.
for Data Retention
PARAMETER
PARAMETER
A
=70
O
C.
A
=25
O
C and not 100% tested.
V
See Retention Waveform
V
V
V
V
V
CE = V
I
CE = V
I
CE = V
I
CE≧V
V
CE≧V
V
CE≧V
V
IH
DQ
DQ
DQ
t
IN
IN
CC
CC
I/O
CC
CC
IN
CDR
V
≧V
≧V
≧V
CC
= 0mA, f = F
= 0mA, f = 1MHz
= 0mA
= Max, V
= 0V to V
= Max, CE= V
= Max, I
= Min, I
CC
CC
CC
CC
CC
CC
IL
IL
IH
A
,
,
,
-0.2V or V
-0.2V or V
-0.2V,
-0.2V,
-0.2V,
-0.2V or V
A
= -40
TEST CONDITIONS
TEST CONDITIONS
= -40
OH
OL
IN
CC
= -1.0mA
= 0V to V
= 2.0mA
MAX
O
Data Retention Mode
C to +85
O
(4)
IN
IN
IH
C to +85
CE≧V
IN
3
≦0.2V
≦0.2V
, or OE = V
≦0.2V
V
DR
CC
≧1.5V
CC
- 0.2V
4. F
5. I
6. I
O
C)
O
CC (MAX.)
CCSB1(MAX.)
MAX
C)
IH
,
=1/t
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
is 29mA/68mA at V
=3.0V
=5.0V
=3.0V
=5.0V
=3.0V
=5.0V
=3.0V
=5.0V
RC.
is 2.0uA/10uA at V
V
-0.5
MIN.
MIN.
t
CC
RC
2.4
2.2
2.4
1.5
t
--
--
--
--
--
--
--
--
R
0
(2)
V
(2)
IH
CC
TYP.
TYP.
CC
=3.0V/5.0V and T
0.25
1.5
0.1
=3.0V/5.0V and T
--
--
--
--
--
--
--
--
--
--
--
--
--
BS62LV4006
(1)
(1)
V
CC
MAX.
MAX.
5.5
0.8
0.4
0.5
1.0
4.0
1.5
+0.3
30
70
10
20
--
--
--
--
1
1
2
Revision
May.
A
(3)
=70
A
=70
O
UNITS
UNITS
C.
O
mA
mA
mA
C.
UA
UA
uA
uA
ns
ns
V
V
V
V
V
V
2006
1.4

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