LPC660AIM National Semiconductor, LPC660AIM Datasheet
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LPC660AIM
Manufacturer Part Number
LPC660AIM
Description
IC,Operational Amplifier,QUAD,CMOS,SOP,14PIN,PLASTIC
Manufacturer
National Semiconductor
Specifications of LPC660AIM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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© 2004 National Semiconductor Corporation
LPC660
Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltages from +5V to +15V and features rail-to-rail
output swing in addition to an input common-mode range
that includes ground. Performance limitations that have
plagued CMOS amplifiers in the past are not a problem with
this design. Input V
voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better
than widely accepted bipolar equivalents, while the power
supply requirement is typically less than 1 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational
amplifier and LPC661 datasheet for a single CMOS opera-
tional amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
Application Circuit
Oscillator frequency is determined by R1, R2, C1, and C2:
where R = R1 = R2 and C = C1 = C2.
OS
, drift, and broadband noise as well as
DS010547
Sine-Wave Oscillator
f
OSC
= 1/2πRC
n Long-term integrator
n High-impedance preamplifier
n Active filter
n Sample-and-Hold circuit
n Peak detector
Features
n Rail-to-rail output swing
n Micropower operation:
n Specified for 100 kΩ and 5 kΩ loads
n High voltage gain:
n Low input offset voltage:
n Low offset voltage drift:
n Ultra low input bias current:
n Input common-mode includes V
n Operation range from +5V to +15V
n Low distortion:
n Slew rate:
n Full military temp. range available
01054710
−
November 2004
0.01% at 1 kHz
www.national.com
1.3 µV/˚C
0.11 V/µs
(1 mW)
120 dB
3 mV
2 fA