NAND01GW3B2BN6E NUMONYX, NAND01GW3B2BN6E Datasheet - Page 19

• Manufacturer Part Number: NAND01GW3B2BN6E
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2BN6E

• Memory Type: Flash
• Memory Size: 1GB
• Access Time: 25µs
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Voltage, Vcc: 3.3V
• Rohs Compliant: Yes
• Interface: Serial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NAND01G-B2B, NAND02G-B2C
5
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 10.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the
2. Only during Cache Read busy.
Read
Random Data Output
Cache Read
Exit Cache Read
Page Program
(Sequential Input default)
Random Data Input
Copy Back Program
Cache Program
Block Erase
Reset
Read Electronic Signature
Read Status Register
addresses or input/output data are not shown.
Command
Commands
1
st
FFh
00h
05h
00h
34h
80h
85h
00h
80h
60h
90h
70h
cycle
Table 10:
Bus write operations
2
Commands.
nd
D0h
E0h
30h
31h
10h
35h
15h
cycle
–
–
–
–
–
3
rd
85h
cycle
–
–
–
–
–
–
–
–
–
–
–
(1)
4
th
10h
cycle
–
–
–
–
–
–
–
–
–
–
–
Command set
Commands
accepted
during
Yes
busy
Yes
Yes
(2)
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