PIC10F206T-E/OT Microchip Technology, PIC10F206T-E/OT Datasheet - Page 67
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PIC10F206T-E/OT
Manufacturer Part Number
PIC10F206T-E/OT
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,TSOP,6PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 10Fr
Datasheets
1.PIC10F200T-IOT.pdf
(96 pages)
2.PIC10F200T-IOT.pdf
(6 pages)
3.PIC10F200T-IOT.pdf
(18 pages)
Specifications of PIC10F206T-E/OT
Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
3
Program Memory Size
768B (512 x 12)
Program Memory Type
FLASH
Ram Size
24 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
SOT-23-6
Processor Series
PIC10F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
24 B
Interface Type
USB
Maximum Clock Frequency
4 MHz
Number Of Programmable I/os
4
Number Of Timers
1
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With
AC162059 - HEADER INTRFC MPLAB ICD2 8/14PINXLT06SOT - SOCKET TRAN ICE 6SOT W/CABLEAC163020 - ADAPTER PROGRAMMER PIC10F2XXAC164321 - MODULE SKT 6L PM3 SOT23AC164037 - MODULE SKT 6L PROMATE II SOT23
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
12.1
© 2007 Microchip Technology Inc.
DC CHARACTERISTICS
D001
D002
D003
D004
D010
D020
D022
D023
D024
Note 1:
Param
No.
2:
3:
4:
5:
6:
*
DC Characteristics: PIC10F200/202/204/206 (Industrial)
V
I
S
Sym
I
I
V
V
VREF
WDT
CMP
I
I
POR
VDD
DD
PD
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only
and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus
rate, internal code execution pattern and temperature also have an impact on the current consumption.
a) The test conditions for all I
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
or V
The peripheral current is the sum of the base I
enabled.
Measured with the comparator enabled.
DD
DR
b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.
All I/O pins tri-stated, pulled to V
SS
Supply Voltage
RAM Data Retention Voltage
V
to ensure Power-on Reset
V
to ensure Power-on Reset)
Supply Current
Power-down Current
WDT Current
Comparator Current
Internal Reference Current
.
DD
DD
Start Voltage
Rise Rate
Characteristic
(5)
(3)
DD
(5)
(4)
can be lowered in Sleep mode without losing RAM data.
DD
measurements in active operation mode are:
(5), (6)
SS
(2)
, T0CKI = V
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40×C ≤ T
0.05*
Min
1.5*
2.0
—
—
—
—
—
—
—
—
—
—
DD
or I
DD
PIC10F200/202/204/206
Typ
, MCLR = V
PD
0.63
0.35
Vss
175
175
0.1
1.0
—
—
12
44
85
7
and the additional current consumed when this peripheral is
(1)
Max
275
115
195
5.5
1.1
1.2
2.4
16
23
80
—
—
—
3
DD
; WDT enabled/disabled as specified.
Units
V/ms
mA
μA
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
See Figure 12-1
Device in Sleep mode
V
V
V
V
V
V
V
V
V
V
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
A
≤ +85°C (industrial)
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V
= 5.0V
= 2.0V.
= 5.0V
Conditions
DS41239D-page 65
DD