EE-SJ5-B Omron, EE-SJ5-B Datasheet
EE-SJ5-B
Manufacturer Part Number
EE-SJ5-B
Description
PHOTO MICROSENSOR
Manufacturer
Omron
Type
Unamplifiedr
Datasheet
1.EE-SJ5-B.pdf
(2 pages)
Specifications of EE-SJ5-B
Sensing Distance
0.197" (5mm)
Sensing Method
Transmissive
Output Configuration
Phototransistor
Current - Dc Forward (if)
50mA
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
30V
Response Time
4µs, 4µs
Mounting Type
Through Hole
Package / Case
PCB Mount
Operating Temperature
-25°C ~ 85°C
Maximum Fall Time
4 us
Maximum Operating Temperature
+ 85 C
Maximum Rise Time
4 us
Minimum Operating Temperature
- 25 C
Wavelength
850 nm
Output Collector Emitter Voltage (detector)
30 V
Maximum Reverse Voltage (emitter)
4 V
Maximum Collector Current (detector)
20 mA
Slot Width
5 mm
Aperture Width
0.5 mm
Output Device
Phototransistor
Power Dissipation
100 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EESJ5B
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EE-SJ5-B
Manufacturer:
OMRON/ŷķ
Quantity:
150
■ Dimensions
Note: All units are in millimeters unless otherwise indicated.
■ Electrical and Optical Characteristics (Ta = 25 C)
112
K
A
Emitter
Detector
Rising time
Falling time
Terminal No.
A
K
C
E
Photomicrosensor (Transmissive)
EE-SJ5-B
7.2 0.2
Internal Circuit
Be sure to read Precautions on page 25.
EE-SJ5-B
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated volt-
age
Peak spectral sensitivity wave-
length
Anode
Cathode
Collector
Emitter
Name
9.2 0.3
5 0.2
15.4
C
E
Item
Four, 0.25
Optical axis
Unless otherwise specified, the
tolerances are as shown below.
3 mm max.
3
6
10
18
Note: There is no difference in size
Photomicrosensor (Transmissive)
Dimensions
mm
mm
mm
mm
between the slot on the emitter
and that on the detector.
6
10
2.54 0.2
18
30
Cross section AA
2.1
0.5 Aperture holes (see note)
Tolerance
0.3
0.375
0.45
0.55
0.65
V
I
I
I
I
V
tr
tf
Four, 0.5
R
L
D
LEAK
P
P
F
CE
Symbol
(sat)
1.2 V typ., 1.5 V max.
0.01 A typ., 10 A max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
850 nm typ.
4 s typ.
4 s typ.
■ Features
• General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide aperture.
■ Absolute Maximum Ratings (Ta = 25 C)
Emitter
Detector
Ambient tem-
perature
Soldering temperature
Note: 1. Refer to the temperature rating chart if the ambient temper-
2. The pulse width is 10
3. Complete soldering within 10 seconds.
ature exceeds 25 C.
100 Hz.
Value
Item
Forward current
Pulse forward cur-
rent
Reverse voltage
Collector–Emitter
voltage
Emitter–Collector
voltage
Collector current
Collector dissipa-
tion
Operating
Storage
I
V
I
I
V
---
I
V
V
V
F
F
F
F
R
CE
CE
CC
CC
= 30 mA
= 20 mA
= 20 mA, V
= 20 mA, I
s maximum with a frequency of
= 4 V
= 10 V, 0 lx
= 10 V
= 5 V, R
= 5 V, R
I
I
V
V
V
I
P
Topr
Tstg
Tsol
F
FP
C
Symbol
R
CEO
ECO
C
L
L
L
Condition
CE
= 0.1 mA
= 100
= 100
= 10 V
50 mA
(see note 1)
1 A
(see note 2)
4 V
30 V
---
20 mA
100 mW
(see note 1)
–25 C to 85 C
–30 C to 100 C
260 C
(see note 3)
, I
, I
Rated value
L
L
= 5 mA
= 5 mA
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EE-SJ5-B Summary of contents
Page 1
... Collector–Emitter saturated volt- age Peak spectral sensitivity wave- length Rising time Falling time 112 EE-SJ5-B Photomicrosensor (Transmissive) ■ Features • General-purpose model with a 5-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings ( 2.1 ...
Page 2
... Relative Light Current vs. Ambi- ent Temperature Characteristics (Typical Ambient temperature Sensing Position Characteristics (Typical (Center of optical axis) Distance d (mm) EE-SJ5-B Photomicrosensor (Transmissive) Light Current vs. Forward Current Characteristics (Typical Forward current I (mA) F Dark Current vs. Ambient Temperature Characteristics (Typical Ambient temperature Sensing Position Characteristics (Typical) 120 ...