1N5919B MULTICOMP, 1N5919B Datasheet

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1N5919B

Manufacturer Part Number
1N5919B
Description
3 W Zener Diode 5.6 V
Manufacturer
MULTICOMP
Datasheets
1.1N5354B.pdf (2 pages)
2.1N5919B.pdf (5 pages)
3.1N5919B.pdf (2 pages)

Specifications of 1N5919B

Zener Voltage Vz Typ
5.6V
Power Dissipation Pd
3W
Diode Case Style
DO-41
No. Of Pins
2
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
1N5919B
Manufacturer:
ST
0
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
1N5919BG
Manufacturer:
ON
Quantity:
2 047
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
1N5919BRLG
Manufacturer:
ON Semiconductor
Quantity:
2 750
Company:
H&T Electronics H&T Electronics
Part Number:
1N5919BRLG
Quantity:
2 500
Zener diode
Features
1. High reliability
2. Low zener impedance
3. Low regulation factor
4. V
Applications
Voltage stabilization
Absolute Maximum Ratings
T
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
www.excel-semi.com
FaxBack +86-512-66607370
Power dissipation
Z-current
Junction temperature
Storage temperature range
Forward voltage
j
j
=25℃
=25℃
Z
-tolerance±5%
Parameter
Parameter
I
F
=200mA
Test Conditions
T
Test Conditions
amb
Excel Semiconductor
≤50℃
Type
Type
Symbol
Symbol
1N5913B~1N5940B
T
V
P
T
I
stg
F
Z
V
j
Min
-65~+175
Value
P
150
1.5
V
/V
Typ
Z
Rev. 3e, 1-Nov-2006
Max
1.5
Unit
mA
W
℃
℃
Unit
V
1/5

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1N5919B Summary of contents

Page 1

Zener diode Features 1. High reliability 2. Low zener impedance 3. Low regulation factor 4. V -tolerance±5% Z Applications Voltage stabilization Absolute Maximum Ratings T =25℃ j Parameter Power dissipation Z-current Junction temperature Storage temperature range Stresses exceeding maximum ratings ...

Page 2

... V I Znom 1N5913B 3.3 113.6 1N5914B 3.6 104.2 1N5915B 3.9 96.1 1N5916B 4.3 87.2 1N5917B 4.7 79.8 1N5918B 5.1 73.5 1N5919B 5.6 66.9 1N5920B 6.2 60.5 1N5921B 6.8 55.1 1N5922B 7.5 50 1N5923B 8.2 45.7 1N5924B 9.1 41.2 1N5925B 10 37.5 1N5926B 11 34,1 ...

Page 3

Characteristics (T =25℃ unless otherwise specified) j Symbol Parameter Vz Reverse zener voltage @ I I Reverse current ZT Z Maximum zener impedance @ Reverse current ZK Z Maximum zener impedance @ Reverse leakage ...

Page 4

Figure 6. Effect of zener voltage Figure 8. Typical pulse rating curve Figure 10. Pulse waveform www.excel-semi.com FaxBack +86-512-66607370 Excel Semiconductor 1N5913B~1N5940B Figure 7. Capacitance curve Figure 9. Pulse waveform Rev. 3e, 1-Nov-2006 4/5 ...

Page 5

Dimensions in mm Φ0.85 max. Cathode 26 min. Standard Glass Case JEDEC DO-41 Marking www.excel-semi.com FaxBack +86-512-66607370 Cathode identification 4.5 max Excel Semiconductor 1N5913B~1N5940B Anode Φ2.8 max. 26 min. ...

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