GSOT24C-GS08 Vishay, GSOT24C-GS08 Datasheet - Page 5

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GSOT24C-GS08

Manufacturer Part Number
GSOT24C-GS08
Description
TVS DIODE ARRAY, 504W, 24V, SOT-23
Manufacturer
Vishay
Datasheet

Specifications of GSOT24C-GS08

Breakdown Voltage Range
30V
Clamping Voltage Vc Max
48V
Diode Configuration
Bidirectional
Peak Pulse Current Ippm
5A
Diode Case Style
SOT-23
No. Of Pins
3
Termination Type
SMD
Voltage - Reverse Standoff (typ)
24V
Voltage - Breakdown
27V
Power (watts)
235W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
SOT-23-3
Polarity
Bidirectional
Channels
2 Channels
Clamping Voltage
41 V
Operating Voltage
24 V (Min)
Breakdown Voltage
27 V
Termination Style
SMD/SMT
Peak Surge Current
5 A
Peak Pulse Power Dissipation
240 W
Capacitance
65 pF
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Dimensions
1.43(Max) mm W x 3.1(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GSOT24C-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
If a higher surge current or peak pulse current (I
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x I
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x C
• double reverse leakage current (2 x I
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Document Number: 85824
Rev. 2.0, 22-Jul-10
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
L2
L1
D
Number of lines which can be protected
Number of lines which can be protected
)
round
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
R
Two-Line ESD-Protection in SOT-23
)
at V
at V
at V
at V
L1
at I
at I
at I
at I
R
at I
R
R
R
PP
PP
PP
PP
at V
at I
= 1.6 V; f = 1 MHz
at I
at I
at I
at I
at I
at I
at V
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 2 V; f = 1 MHz
round
R
= I
= I
= I
= I
R
R
R
R
PP
PP
PP
PP
2
= 100 μA
PP
R
= 20 μA
= 1 mA
PPM
PPM
= 1 mA
PPM
PPM
= 3.3 V
= 1 A
= 1 A
= 4 V
= 1 A
= 1 A
) is needed, both protection diodes in the GSOTxxC can also be used in
3
= 30 A
= 30 A
= 30 A
= 30 A
1
PPM
)
2
3
ESDprotection@vishay.com
1
SYMBOL
SYMBOL
N
N
V
V
channel
channel
V
V
RWM
V
C
RWM
V
C
V
V
I
I
BR
BR
R
R
C
F
D
C
F
D
20359
GSOT03C to GSOT36C
MIN.
MIN.
3.3
4
4
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
TYP.
TYP.
11.2
420
310
260
200
4.6
5.7
4.5
6.1
7.5
4.5
10
BiAs
1
1
-
-
-
-
-
-
20358
MAX.
MAX.
12.3
14.3
100
600
450
7.5
1.2
1.2
20
2
2
9
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
lines
lines
μA
μA
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
5

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