GSOT24C-GS18 Vishay, GSOT24C-GS18 Datasheet - Page 5

• Manufacturer Part Number: GSOT24C-GS18
• Description: TVS DIODE ARRAY, 504W, 24V, SOT-23
• Manufacturer: Vishay

Specifications of GSOT24C-GS18

• Reverse Stand-off Voltage Vrwm: 24V
• Breakdown Voltage Range: 30V
• Clamping Voltage Vc Max: 1.4V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 5A
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

If a higher surge current or peak pulse current (I
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x I
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x C
• double reverse leakage current (2 x I
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Document Number: 85824
Rev. 2.0, 22-Jul-10
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
L2
L1
D
Number of lines which can be protected
Number of lines which can be protected
)
round
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
R
Two-Line ESD-Protection in SOT-23
)
at V
at V
at V
at V
L1
at I
at I
at I
at I
R
at I
R
R
R
PP
PP
PP
PP
at V
at I
= 1.6 V; f = 1 MHz
at I
at I
at I
at I
at I
at I
at V
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 2 V; f = 1 MHz
round
R
= I
= I
= I
= I
R
R
R
R
PP
PP
PP
PP
2
= 100 μA
PP
R
= 20 μA
= 1 mA
PPM
PPM
= 1 mA
PPM
PPM
= 3.3 V
= 1 A
= 1 A
= 4 V
= 1 A
= 1 A
) is needed, both protection diodes in the GSOTxxC can also be used in
3
= 30 A
= 30 A
= 30 A
= 30 A
1
PPM
)
2
3
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1
SYMBOL
SYMBOL
N
N
V
V
channel
channel
V
V
RWM
V
C
RWM
V
C
V
V
I
I
BR
BR
R
R
C
F
D
C
F
D
20359
GSOT03C to GSOT36C
MIN.
MIN.
3.3
4
4
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
TYP.
TYP.
11.2
420
310
260
200
4.6
5.7
4.5
6.1
7.5
4.5
10
BiAs
1
1
-
-
-
-
-
-
20358
MAX.
MAX.
12.3
14.3
100
600
450
7.5
1.2
1.2
20
2
2
9
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
lines
lines
μA
μA
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
5