GBPC3501-E4 Vishay, GBPC3501-E4 Datasheet - Page 3

• Manufacturer Part Number: GBPC3501-E4
• Description: BRIDGE RECTIFIER, 1PH, 35A, 100V QC
• Manufacturer: Vishay

Specifications of GBPC3501-E4

• No. Of Phases: Single
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 35A
• Forward Voltage Vf Max: 1.1V
• Operating Temperature Range: -55°C To +150°C
• Bridge Rectifier Case Style: GBPC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88612
Revision: 28-Mar-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
= 25 °C unless otherwise noted)
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
40
35
30
25
20
15
10
5
0
5
0
0
0
0
0
GBPC35
R
GBPC25
R
GBPC15
R
GBPC12
R
60 Hz
Resistive or
Inductive Load
Fig. 1 - Maximum Output Rectified Current
Fig. 2 - Maximum Output Rectified Current
thSA
thSA
thSA
thSA
10
T
25
J
Fig. 3 - Maximum Power Dissipation
Capacitive Load
= 0.5 °C/W
= 0.5 °C/W
= 1.0 °C/W
= 1.0 °C/W
= T
20
J
Max.
Average Output Current (A)
50
10
Ambient Temperature (°C)
30
Case Temperature (°C)
75
40
Bridges Mounted on
9.5 x 3.5 x 4.6"
(22.9 x 8.9 x 11.7 cm)
AL, Finned Plate
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
100
50
20
5 x 6 x 4.9"
AL, Finned Plate
5 x 4 x 3"
AL, Finned Plate
60
125
Resistive or
Inductive Load
70
6 x 2.2 x 2.2"
AL, Finned Plate
60 Hz
Resistive or
Inductive Load
150
30
80
This document is subject to change without notice.
175
90
100
200
40
GBPC12, GBPC15, GBPC25, GBPC35
Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
1000
1000
Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
100
100
100
0.1
0.1
10
10
10
1
1
0.4
1
0
[e-mail]
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
T
10
A
0.5
= 100 °C
Instantaneous Forward Voltage (V)
20
T
Number of Cycles at 60 Hz
A
0.6
= 125 °C
30
Current Per Diode
1.0 Cycle
T
40
A
0.7
= 150 °C
T
T
T
T
A
A
A
A
10
50
= 150 °C
= 125 °C
= 100 °C
= 25 °C
T
0.5 ms Single Sine-Wave
0.8
J
= T
60
GBPC12
www.vishay.com/doc?91000
J
Max.
70
0.9
GBPC35
T
A
80
= 25 °C
GBPC15
GBPC25
1.0
www.vishay.com
90
100
100
1.1
3