KBU4G-E4/1 Vishay, KBU4G-E4/1 Datasheet - Page 3

BRIDGE RECTIFIER, 1PH, 4A, 400V THD

KBU4G-E4/1

Manufacturer Part Number
KBU4G-E4/1
Description
BRIDGE RECTIFIER, 1PH, 4A, 400V THD
Manufacturer
Vishay
Datasheet

Specifications of KBU4G-E4/1

No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
4A
Forward Voltage Vf Max
1V
Current Rating
4A
Leaded Process Compatible
Yes
Diode Type
Bridge Rectifier
Forward Voltage
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88656
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
50
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
J
= 25 °C
T
1.0
J
60
= 100 °C
T
J
= 25 °C
1.1
(19.3)
(25.4)
0.760
MAX.
MIN.
1.0
0.205 (5.2)
0.185 (4.7)
80
0.160 (4.1)
0.140 (3.6)
1.2
0.220 (5.6)
0.180 (4.6)
0.660
(16.8)
0.700
(17.8)
100
1.3
0.075 (1.9) R TYP. (2 Places)
Case Style KBU
0.895 (22.7)
0.935 (23.7)
0.240 (6.09)
0.200 (5.08)
150
100
75
50
25
0.052 (1.3)
0.048 (1.2)
0
Figure 5. Typical Junction Capacitance Per Diode
0.455 (11.3)
0.405 (10.3)
0.1
0.165 (4.2)
0.185 (4.7)
DIA.
45°
Vishay General Semiconductor
0.280 (7.1)
0.260 (6.6)
0.085 (2.2)
0.065 (1.7)
KBU4A thru KBU4M
Reverse Voltage (V)
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
3

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