BYG10G-E3/TR Vishay, BYG10G-E3/TR Datasheet - Page 3

• Manufacturer Part Number: BYG10G-E3/TR
• Description: AVALANCHE DIODE, 1.5A 400V DO-214AC
• Manufacturer: Vishay

Specifications of BYG10G-E3/TR

• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.15V
• Reverse Recovery Time Trr Max: 4µs
• Diode Type: Standard Recovery
• Voltage - Forward (vf) (max) @ If: 1.15V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
Document Number 88957
05-Jul-06
1000
400
350
300
250
200
150
100
100
Figure 3. Reverse Current vs. Junction Temperature
50
30
25
20
15
10
10
0
5
0
1
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
25
25
V
V
R
R
= V
= V
50
50
RRM
Junction Temperature (°C)
RRM
Junction Temperature (°C)
1.0
Reverse Voltage (V)
75
75
P
at 80 % V
R
- Limit
100
100
R
10
P
at 100 % V
R
- Limit
f = 1 MHz
125
125
R
150
100
150
Figure 7. Reverse Recovery Charge vs. Forward Current
5000
4000
3000
2000
1000
2000
1600
1200
Figure 6. Reverse Recovery Time vs. Forward Current
800
400
0
0
0
0
Vishay General Semiconductor
0.2
0.2
BYG10D thru BYG10Y
T
Forward Current (A)
T
amb
amb
Forward Current (A)
= 75 °C
= 100 °C
0.4
0.4
T
amb
T
= 100 °C
I
T
amb
R
I
T
amb
R
= 0.5 A, i
amb
= 0.5 A, i
= 25 °C
0.6
0.6
= 25 °C
= 125 °C
T
T
amb
T
amb
amb
R
T
R
= 50 °C
amb
= 0.125 A
= 125 °C
= 0.125 A
= 50 °C
0.8
0.8
= 75 °C
www.vishay.com
1.0
1.0
3