BYG10G-E3/TR Vishay, BYG10G-E3/TR Datasheet - Page 3

• Manufacturer Part Number: BYG10G-E3/TR
• Description: AVALANCHE DIODE, 1.5A 400V DO-214AC
• Manufacturer: Vishay

Specifications of BYG10G-E3/TR

• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 1.5A
• Forward Voltage Vf Max: 1.15V
• Reverse Recovery Time Trr Max: 4µs
• Diode Type: Standard Recovery
• Voltage - Forward (vf) (max) @ If: 1.15V @ 1.5A
• Voltage - Dc Reverse (vr) (max): 400V
• Current - Average Rectified (io): 1.5A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88957
Revision: 03-Jun-09
Figure 2. Max. Average Forward Current vs. Ambient Temperature
A
= 25 °C unless otherwise noted)
0.001
1000
0.01
100
100
1.4
0.4
0.2
1.6
1.2
1.0
0.8
0.6
0.1
10
Figure 3. Reverse Current vs. Junction Temperature
10
0
1
1
25
Figure 1. Forward Current vs. Forward Voltage
0
0
20
R
R
V
T
0.5
θJA
θJA
R
J
50
= 150 °C
= V
≤ 125 K/W
≤ 150 K/W
40
Junction Temperature (°C)
Ambient Temperature (°C)
RRM
V
Half Sine-Wave
R
R
θJA
1.0
= V
≤ 25 K/W
60
RRM
75
T
J
= 25 °C
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For technical questions within your region, please contact one of the following:
1.5
80
100
100
2.0
120
125
2.5
140
160
150
3.0
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
5000
4000
3000
2000
1000
Figure 6. Reverse Recovery Time vs. Forward Current
400
350
300
250
200
150
100
50
30
25
20
15
10
5
0
0
0
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
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25
0
Vishay General Semiconductor
V
R
= V
0.2
50
BYG10D thru BYG10Y
RRM
Junction Temperature (°C)
T
Forward Current (A)
Reverse Voltage (V)
A
1
= 100 °C
0.4
75
P
R
- Limit at 80 % V
T
I
R
A
= 0.5 A, i
P
= 25 °C
100
R
0.6
- Limit at 100 % V
10
T
A
= 50 °C
R
T
= 0.125 A
R
T
A
f = 1 MHz
A
125
= 75 °C
0.8
= 125 °C
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R
150
100
1.0
3