ES3B-E3/57T Vishay, ES3B-E3/57T Datasheet - Page 3
![FAST DIODE, 3A, 100V, DO-214AB](/photos/5/33/53334/112-do-214ab_sml.jpg)
ES3B-E3/57T
Manufacturer Part Number
ES3B-E3/57T
Description
FAST DIODE, 3A, 100V, DO-214AB
Manufacturer
Vishay
Specifications of ES3B-E3/57T
Repetitive Reverse Voltage Vrrm Max
100V
Forward Current If(av)
3A
Forward Voltage Vf Max
900mV
Reverse Recovery Time Trr Max
20ns
Forward Surge Current Ifsm Max
100A
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
900mV @ 3A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
10µA @ 100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
0.9 V
Recovery Time
30 ns
Forward Continuous Current
3 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ES3B-E3/57TGITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ES3B-E3/57T
Manufacturer:
Vishay Semiconductors
Quantity:
2 436
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88589
Revision: 04-Jul-07
10000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
0
Percent of Rated Peak Reverse Voltage (%)
0.3
Tj = 125 °C
Instantaneous Forward Voltage (V)
20
Tj = 150 °C
0.5
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
40
0.079 (2.06)
0.103 (2.62)
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
0.7
Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
60
0.9
DO-214AB (SMC)
80
1.1
0.320 (8.13)
0.305 (7.75)
0.260 (6.60)
0.280 (7.11)
Cathode Band
100
1.3
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
(3.20 MIN.)
0.126 MIN.
30
20
10
50
40
0
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.320 REF
Reverse Voltage (V)
0.060 MIN.
(1.52 MIN.)
1
0.185 MAX.
(4.69 MAX.)
ES3A thru ES3D
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
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